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Chinese Journal of Physics

Phase Transitions for the Random Transverse Spin 1/2 Ising Film

Hamid Ez-zahraouy A, Ahmed Kassou-Ou-Ali

Published Feb 1, 2002• 1 citation
OpenAlex

Abstract

The effect of a random transverse field on the phase transitions of a ferromagnetic spin 1/2 Ising film is investigated within a finite cluster approximation with an expansion technique for the cluster identities of spin 1/2 systems. The phase diagrams are determined as a function of the transverse field for different values of the concentration p of the disorder of the latter. It is found that at very low temperatures the ferromagnetic order is destroyed under the effect of the transverse field only if the concentration is larger than a critical value pc, which is independent of the film thickness.

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The effect of a random transverse field on the phase transitions of a ferromagnetic spin 1/2 Ising film is investigated within a finite cluster approximation with an expansion technique for the cluster identities of spin 1/2 systems. The phase diagrams are determined as a function of the transverse field for different values of the concentration p of the disorder of the latter. It is found that at very low temperatures the ferromagnetic order is destroyed under the effect of the transverse field only if the concentration is larger than a critical value pc, which is independent of the film thickness.
The effect of surface and bulk transverse fields on the phase transitions of a semi-infinite spin-1 ferromagnetic Ising model is investigated within a finite cluster approximation with an expansion technique for cluster identities of spin-1 localized spin systems. The phase diagrams are determined as a function of the ratio of bulk and surface transverse fields, the temperature and the transverse field of the surface. They show that the systems exhibit a variety of phase transitions. A dead layer is also obtained in a special region of space parameters.
The effect of random bond (site) dilution on the phase transition of a three-dimensional transverse Ising model is studied by a cluster variation, along with perturbation expansion method. Complete phase diagrams in the temperature-concentration-transverse-field space are constructed for both the cases. The value of critical transverse field as a function of concentration, at zero temperature, exhibits a discontinuity at the critical value of concentration for the existence of phase transition, as conjectured by Harris. As is expected for the existence of a second-order phase transition, the static susceptibility diverges on the critical surface.
Recently, there has been interest in the problems of disorder in the Ising model in a transverse field, which may apply to DKDP-KDP mixed systems and diluted vanadates. The site and bond diluted transverse Ising models have already been studied using Green's function techniques along with the coherent potential approximation. However, the situation as regards to the existence of a second order phase transition and the divergence of the static susceptibility is not very clear. In the present paper, a spin ½ Ising model in a transverse field and random bond (site) dilution is studied by variational cluster and perturbation expansion method. The critical temperature for the existence of a second order phase transition is calculated as a function of concentration of bonds (spins) and the transverse field. Variation of the critical concentration, for the existence of phase transition, is studied as a function of the transverse field. A phase diagram in the temperature-concentration-transverse field space is constructed. The static susceptibility is calculated and is found to diverge at the critical temperature, as is expected for the existence of a second order phase transition.
Within the framework of the effective field theory, with a probability distribution technique that accounts for the single-site spin correlations, we examine the critical behavior of a diluted spin-1/2 Ising film. The critical temperature of the system is studied as a function of the thickness of the film, the concentration of magnetic atoms, the strength of the transverse field and the couplings. It is shown that for the ratio of the surface couplings to the bulk ones R = Js/J less than a critical value R,, the critical temperature of the film Tc/J is smaller than the bulk critical temperature Tc^B/J and for R ≥ Rc, Tc/J is larger than the bulk critical temperature Tc^B/J and Tc^S/J of the corresponding semi-infinite system. As the film thickness L is increased further Tc/J increases for R ≤ Rc (decreases for R 2 R,) and approaches asymptotically for large values of L the bulk critical temperature Tc^B/J (the surface critical temperature Tc^S/J) of the corresponding semi-infinite system.