Abstract Color centers, optically active defects within solids, are vital for leading quantum information technologies such as quantum computing and quantum sensing. An essential prerequisite for realizing scalable quantum architectures is the ability to create quantum emitters deterministically. In the last decades, significant efforts have been devoted to selectively generating color centers. One of the most used methods is high‐energy ion implantation. However, this method usually causes extended lattice damage along the entire trajectory because of ions bombardment. Moreover, the position depth of color centers is also limited by the ions penetrate length in crystals. The direct laser‐writing (DLW) technique has recently emerged as a powerful tool to create color centers in solid‐state materials. It can define color centers at arbitrary depths inside the substrate and operate at the ambient environment, therefore, providing a feasible 3D fabrication method for integrated quantum photonics. Here, recent advancements of laser writing of color centers in solid‐state materials are reviewed, from bulk crystals, such as diamond and silicon carbide, to nanostructures, involving single‐walled carbon nanotubes, 2D layered materials, and quantum dots.
Abstract Color centers, optically active defects within solids, are vital for leading quantum information technologies such as quantum computing and quantum sensing. An essential prerequisite for realizing scalable quantum architectures is the ability to create quantum emitters deterministically. In the last decades, significant efforts have been devoted to selectively generating color centers. One of the most used methods is high‐energy ion implantation. However, this method usually causes extended lattice damage along the entire trajectory because of ions bombardment. Moreover, the position depth of color centers is also limited by the ions penetrate length in crystals. The direct laser‐writing (DLW) technique has recently emerged as a powerful tool to create color centers in solid‐state materials. It can define color centers at arbitrary depths inside the substrate and operate at the ambient environment, therefore, providing a feasible 3D fabrication method for integrated quantum photonics. Here, recent advancements of laser writing of color centers in solid‐state materials are reviewed, from bulk crystals, such as diamond and silicon carbide, to nanostructures, involving single‐walled carbon nanotubes, 2D layered materials, and quantum dots.
Abstract Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single‐photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.
Integrated photonic circuits promise to be foundational for applications in quantum information and sensing technologies, through their ability to confine and manipulate light. A key role in such technologies may be played by spin-active quantum emitters, which can be used to store quantum information or as sensitive probes of the local environment. A leading candidate is the negatively charged nitrogen vacancy (NV−) diamond color center, whose ground spin state can be optically read out, exhibiting long (≈1 ms) coherence times at room temperature. These properties have driven research toward the integration of photonic circuits in the bulk of diamond with the development of techniques allowing fabrication of optical waveguides. In particular, femtosecond laser writing has emerged as a powerful technique, capable of writing light guiding structures with 3D configurations as well as creating NV complexes. In this Perspective, the physical mechanisms behind laser fabrication in diamond will be reviewed. The properties of waveguides, single- and ensemble-NV centers, will be analyzed, together with the possibility to combine such structures in integrated photonic devices, which can find direct application in quantum information and sensing.
Color centers in diamond have widespread utility in quantum technologies, but their creation process remains stochastic in nature. Deterministic creation of color centers in device-ready diamond platforms can improve the yield, scalability, and integration. Recent work using pulsed laser excitation has shown impressive progress in deterministically creating defects in bulk diamond. Here, we extend this laser-writing process into nanophotonic devices etched into diamond membranes, including nanopillars and photonic resonators with writing and subsequent readout occurring in situ at cryogenic temperatures. We demonstrate the optically driven creation of carbon vacancy (GR1) and nitrogen vacancy (NV) centers in diamond nanopillars and observe enhanced photoluminescence collection from them. We also fabricate bullseye resonators and leverage their cavity modes to locally amplify the laser-writing field, yielding defect creation with picojoule write-pulse energies 100 times lower than those typically used in bulk diamond demonstrations.
ABSTRACT Quantum computing leverages the principles of quantum mechanics to perform computations that are infeasible for classical computers. Color centers, which are point defects in a crystal lattice where vacancies in the lattice and/or an impurity atom replace a host atom, exhibit unique optical, electronic, and nuclear spin properties that make them suitable for quantum information and communication processing as well as for quantum computations with quantum memory. Among the color centers, nitrogen‐vacancy centers in diamond, the most developed, silicon vacancy (V Si ) centers in silicon carbide (SiC), and boron vacancy (V B ) centers in hexagonal boron nitride (hBN) have emerged as leading candidates. Diamond and SiC material hosts are particularly promising due to the long spin and photon coherence times, optical addressability, compatibility with various quantum operations, while SiC promises higher compatibility with scalable industrial fabrication processing, and 2D materials are better suited for hybrid photonics and electronics integration. This paper provides a detailed overview of the advantages, challenges, and recent advancements in using these color centers for quantum computing. In addition, it discusses other potential color centers of interest, such as silicon (SiV) and germanium (GeV) vacancies in diamond, tin vacancies (SnV) in diamond, chromium and nickel centers in diamond, and rare‐earth ions in host materials like yttrium orthosilicate and calcium fluoride. By understanding and utilizing the properties of these diverse color centers, researchers aim to develop more efficient, scalable, and versatile quantum computers, which could lead to hybrid quantum‐classical systems that combine the strengths of different platforms and potentially transform fields like cryptography, material science, drug discovery, and complex system simulations (climate modeling, fusion energy).
Solid-state color-center spin defects provide a versatile platform for quantum sensing with applications ranging from nanoscale magnetometry to thermometry and electrometry. This review surveys recent progress in nitrogen-vacancy centers in diamond and defect spins in silicon carbide (SiC), with emphasis on their material properties, fabrication strategies, and coherence engineering. Key defect creation and optimization techniques, including ion implantation, femtosecond laser writing, focused ion beam nanofabrication, isotopic engineering, and surface passivation, are discussed in the context of improving spin coherence and optical performance. Fundamental quantum measurement protocols, optically detected magnetic resonance, Rabi oscillations, Ramsey interferometry, and spin echo, are reviewed as a hierarchical framework for characterizing spin control, dephasing, and intrinsic coherence. The review further highlights microscale sensing architectures and examines the growing role of machine learning in pulse optimization, adaptive estimation, and data-driven imaging. Finally, current challenges and future directions are outlined, focusing on scalability, environmental robustness, and autonomous operation. Together, these developments position diamond and SiC color centers as leading platforms for next-generation solid-state quantum sensors.
Luminescent lattice defects (so called “color centers”) in diamond provide a robust, solid-state architecture for exploring quantum optics, with many facilitating direct access to highly coherent electron and nuclear spins. The past two decades have seen tremendous advances in our ability to prepare and control the quantum states of these atom-like systems. For instance, demonstrations that leverage the diamond nitrogen vacancy (NV–) center as a spin-photon interface have included the generation of indistinguishable photons, a quantum bit memory exceeding 1 second, entanglement of two distance solid-state qubits, and deterministic long distance quantum teleportation. While diamond color centers are an attractive platform for scalable quantum information processing, the diamond solid-state matrix, by its very nature, inhibits efficient photon collection into either free-space or fiber-optical systems. Due to its large refractive index, emitted photons are inevitably trapped within the diamond crystal by total internal reflection, limiting count rates and overall scalability of information processing via quantum optical protocols. To this end, there has been significant progress towards integrating individual diamond color centers within well-defined radiation channels: namely, those provided by monolithic diamond nanophotonic networks. Currently, on-chip low loss (~ few db/cm) diamond waveguide networks are available, as well as key passive photonic elements like micron scale ring and disk resonators and photonic crystal cavities, with high optical quality (Q) factors. Specifically, we recently demonstrated a scalable ‘angled-etching’ nanofabrication method for realizing nanophotonic networks starting from bulk single-crystal diamond substrates (MJ Burek et al., Nano Letters 2012, MJ Burek et al., Nat Comm. 2014). Angled-etching employs anisotropic oxygen-based plasma etching at an oblique angle to the substrate surface, resulting in suspended optical structures with triangular cross-sections. Using this approach, we demonstrated high Q-factor (> 10^5) optical nanocavities fabricated in bulk single-crystal diamond, operating over a wide wavelength range (visible to telecom). Beyond isolated photonic devices, we have further developed free-standing angled-etched waveguides which efficiently route photons between diamond optical nanocavities, while maintaining physical support through attachment to the bulk substrate. Although on-chip diamond nanophotonics realized by angled-etching continue to mature, efficient off-chip optical coupling schemes which provide near seamless transition of photons on-chip into commercial optical fibers remain an outstanding challenge. This is especially pertinent in applications involving single photons, such as quantum optics with diamond color centers. Herein, we demonstrate a high efficiency fiber-optical interface with aforementioned on-chip diamond nanophotonic networks, achieving > 90% power coupling at both telecom and visible wavelengths. The coupling scheme utilizes a single mode optical fiber, with one end fabricated into a conical taper, to adiabatically transition guided light between on-chip tapered diamond waveguides and off-chip optical fiber networks. Additionally, we develop techniques to robustly pigtail single-mode fibers with diamond waveguide couplers, yielding a packaged technology that may potentially enable deployment in harsh environments, including vacuum, sub-Kelvin cryogenics, or even liquid/biological environments. With these newly developed optical integration schemes, single-crystal diamond is now a viable integrated nanophotonics platform, servicing a range of applications, from non-linear optics and chemical sensing, to quantum science and cavity optomechanics.