We solved in closed form the resonant-modulation problem for the effect of the high-frequency electric field on the absorption spectra of the three-level system. It is shown that an electric field whose frequency is made resonant with the separation between two upper levels should give rise to the two absorption lines of equal intensity disposed symmetrically in pairs about the allowed line. The separation between these two lines is linearly proportional to the intensity of the electric field. The positions and the property of equal intensity of these lines are the same in both the laser absorption spectrum and the ordinary absorption spectrum.
We study spectral properties of fluorescent radiation from a two-level quantum system with broken inversion spatial symmetry, which can be implemented as a model of a one-electron two-level atom whose electric dipole moment operator has permanent unequal diagonal matrix elements. We consider the case of the excitation of this system by a bichromatic laser field consisting of a high-frequency resonance component with the frequency coinciding with the atomic transition frequency and a low-frequency component whose frequency coincides with the Rabi frequency of the high-frequency component. We show that by changing the intensity of the low-frequency component, we can efficiently control spectral properties of the fluorescent radiation of the system in the high-frequency range. We discuss possible methods for the experimental detection and practical use of the effects under study.
Spectral properties of fluorescent radiation from a two-level quantum system with broken inversion spatial symmetry, which can be described by a model of an one-electron two-level atom whose electric dipole moment operator has permanent unequal diagonal matrix elements, were studied. The case of the excitation of this system by a polychromatic laser field, comprised of
N−1 high-frequency components with the frequencies close to or being in resonance with the atomic transition frequency, and a low-frequency component whose frequency coincides with the Rabi frequency of the high-frequency components, was considered. Special attention was given to the resonant bichromatic and nearly resonant trichromatic excitation. In the former case it was shown that by changing the intensity of the low-frequency component, one can efficiently alter spectral properties of the fluorescent radiation of the system in the high-frequency range, while in the latter case it was found that the fluorescent behavior of the system in question reveals a kind of an optoelectronic transistor effect. Options for the experimental detection and practical usage of the effects under study were discussed.