Abstract Flicker noise causes decoherence in Josephson junction-based superconducting qubits, thus limiting their practical potential as building blocks for quantum computers. This is due to limited length and complexity of executable algorithms, and increased dependency on error-correcting measures. Therefore, identifying and subsiding the atomic sources of flicker noise are of great importance to the development of this technology. We developed a method that combines ab initio DFT calculations and quantum dynamics to model charge transport across a Josephson junction, by which it is possible to more accurately assess different defects as sources of flicker noise. We demonstrate the use of our method in an investigation of various atomic defects, including vacancies, trapping, and substitutions, in an Al|Al2O3|Al Josephson junction. This demonstration both reveals weaknesses in previous attempts to pinpoint the atomic sources of flicker noise and highlights new candidates.
Quantum computation is a fascinating field that combines novel physics with improvements in computation times and has been rapidly growing in the past few years. Using superconductors to form the qubits has the potential for large-scale computing, if the decoherence inherent in these devices can be understood and reduced. Two-level fluctuators due to defects in the materials are thought to cause changes to the Josephson critical current or the flux through the superconducting loop of a flux qubit, which leads to decoherence in the qubit. Alternatively, defects in the crystal lattice give rise to electron localization which in turn traps spins with random orientations at the substrate/metal interface, again producing decoherence. My work studied the proposed noise mechanisms by using Molecular Beam Epitaxy to fabricate single-crystal niobium-based Josephson junctions. Using RHEED, AFM, and TEM/STEM, I studied the epitaxy of the niobium film at the substrate interface to reduce noise due to crystal defects. I then measured flux noise in these films; the noise in the epitaxial films is lower than the comparative polycrystalline films. Further measurements using ex-situ Josephson junctions and epitaxial niobium loops resulted in the lowest reported flux noise measurements to date. Additionally, EELS measurements made in the course of the STEM analysis of the crystal structure reveal oxygen depletion from the substrate at elevated growth temperatures. This depletion leads to oxygen vacancies in the aluminum oxide substrate, which can in turn lead to charge traps at the substrate/metal interface and hence to decoherence in the qubit. Critical current noise was investigated by changing the oxidation dose of the alumina barrier in more than 50 separate Josephson junctions. Films which were grown with lower oxidation doses have a non-ideal critical current temperature dependence as well as higher critical current noise values, suggesting that insufficient oxygen is being incorporated into these junctions. Finally, I studied the effect of surface cleaning after fabrication for resonators and transmons. Microscopy shows that an oxygen ash and BOE dip together removes all photoresist residue from the chip. Internal-Q measurements do not show a marked improvement due to this cleaning, but the coherence times do improve upon the cleaning step.
Superconducting quantum circuits are promising platforms for scalable quantum computing, where qubit coherence is critically determined by microscopic defects in the oxide tunneling barrier of Josephson junctions. Amorphous Al
2O
3 is widely used as a barrier material, but under irradiation, oxygen vacancy (V
O) defects are readily generated, introducing noise sources that accelerate qubit decoherence. We systematically investigate the structural characteristics and electronic impact of V
O defects in amorphous Al
2O
3 using first-principles calculations and \textit{ab initio} molecular dynamics. Our results show that both the coordination environment and concentration of V
Os strongly influence electrical conductivity. In particular, two- and three-coordinated V
Os, unique to the amorphous structure, enhance conductivity more than conventional four-coordinated vacancies. Increasing V
O concentration amplifies conductivity fluctuations, which we link to critical current noise in Josephson junctions. Using a noise model, we estimate that higher V
O densities lead to shorter qubit coherence times. These findings provide insights for radiation-hard design of superconducting quantum devices.
The field of quantum computing is growing at a rapid rate with the promise of dramatic improvements in the ability to solve critical computational problems. A leading approach for implementing fault-tolerant quantum computers is based on superconducting circuits containing Josephson junctions to form qubits. These qubits have many attractive qualities, but predicting the device performance requires detailed knowledge of the junction properties. Thus, precise characterization is crucial for realizing different qubit designs. The coherence of superconducting qubits is limited by several sources in the circuit en- vironment. Building a quantum computer requires effort to reduce gate errors caused by decoherence. This is typically achieved with quantum error correction. An alternative ap- proach involves designing qubits that are intrinsically protected from noise sources. One such design is the charge-parity qubit, which combines Josephson junctions in a novel regime. The capacitance of the junctions is a critical parameter for this qubit design that directly affects the engineered protection against decoherence. Beyond the conventional geometric capaci- tance, there is an excess contribution from virtual quasiparticle tunneling; we refer to this component as the electronic capacitance. This thesis focuses on the characterization of the capacitance of Josephson junctions, with the goal of isolating and measuring the electronic capacitance contribution, particularly for use in the charge-parity qubit. The thesis first reviews the initial implementation of the charge-parity qubit and the challenges that were encountered. Next, the theoretical origin is described and a framework for measuring the junction capacitance using superconducting resonant circuits is described. This technique is then applied to arrays of junctions fabricated with different parameters and the scaling of the electronic capacitance is presented. Finally, based on this knowledge of the junction capacitance, second-generation charge-parity qubits are implemented and the experimental results are presented.
We compute the decoherence caused by
1∕f fluctuations at low frequency
f in the critical current
I0 of Josephson junctions incorporated into flux, phase, charge, and hybrid flux-charge superconducting quantum bits (qubits). The dephasing time ${\ensuremath{\tau}}_{\ensuremath{\phi}}$ scales as ${I}_{0}∕\ensuremath{\Omega}\ensuremath{\Lambda}{S}_{{I}_{0}}^{1∕2}(1\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})$, where $\ensuremath{\Omega}∕2\ensuremath{\pi}$ is the energy-level splitting frequency,
SI0(1Hz) is the spectral density of the critical-current noise at
1Hz, and $\ensuremath{\Lambda}\ensuremath{\equiv}\ensuremath{\mid}{I}_{0}d\ensuremath{\Omega}∕\ensuremath{\Omega}d{I}_{0}\ensuremath{\mid}$ is a parameter computed for given parameters for each type of qubit that specifies the sensitivity of the level splitting to critical-current fluctuations. Computer simulations show that the envelope of the coherent oscillations of any qubit after time
t scales as $\mathrm{exp}(\ensuremath{-}{t}^{2}∕2{\ensuremath{\tau}}_{\ensuremath{\phi}}^{2})$ when the dephasing due to critical-current noise dominates the dephasing from all sources of dissipation. We compile published results for fluctuations in the critical current of Josephson tunnel junctions fabricated with different technologies and a wide range in
I0 and area
A, and show that their values of
SI0(1Hz) scale to within a factor of 3 of $[144{({I}_{0}∕\ensuremath{\mu}\mathrm{A})}^{2}∕(\mathcal{A}∕\ensuremath{\mu}{\mathrm{m}}^{2})]{(\mathrm{pA})}^{2}∕\mathrm{Hz}$ at
4.2K. We empirically extrapolate
SI01∕2(1Hz) to lower temperatures using a scaling
T(K)∕4.2. Using this result, we find that the predicted values of ${\ensuremath{\tau}}_{\ensuremath{\phi}}$ at
100mK range from $0.8\phantom{\rule{0.5em}{0ex}}\text{to}\phantom{\rule{0.5em}{0ex}}12\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{s}$, and are usually substantially longer than values measured experimentally at lower temperatures.
Abstract Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h -BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 / h -BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h -BN layer. We further characterized the superconducting current and voltage ( I – V ) relationships and Fraunhofer pattern of the NbSe 2 / h -BN/Nb junction. Notably, we demonstrated the critical current noise (1/ f noise power) in the h -BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h -BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.
We calculate for the current-biased Josephson junction the decoherence of the qubit state from noise and dissipation. The effect of dissipation can be entirely accounted for through a semiclassical noise model that appropriately includes the effect of zero-point and thermal fluctuations from dissipation. The magnitude and frequency dependence of this dissipation can be fully evaluated with this model to obtain design constraints for small decoherence. We also calculate decoherence from spin echo and Rabi control sequences and show they are much less sensitive to low-frequency noise than for a Ramsey sequence. We predict small decoherence rates from
1/f noise of charge, critical current, and flux based on noise measurements in prior experiments. Our results indicate this system is a good candidate for a solid-state quantum computer.