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Advanced Photonics

Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review

Stefania Castelletto, Alberto A. Boretti

Published Sep 13, 2021• 23 citations
Publisher

Abstract

Solid-state atomic-sized color centers in wide-bandgap semiconductors, such as diamond, silicon carbide, and hexagonal boron nitride, are important platforms for quantum technologies, specifically for single-photon sources and quantum sensing. One of the emerging applications of these quantum emitters is subdiffraction imaging. This capability is provided by the specific photophysical properties of color centers, such as high dipole moments, photostability, and a variety of spectral ranges of the emitters with associated optical and microwave control of their quantum states. We review applications of color centers in traditional super-resolution microscopy and quantum imaging methods, and compare relative performance. The current state and perspectives of their applications in biomedical, chemistry, and material science imaging are outlined.

DOI
10.1117/1.ap.3.5.054001

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Solid-state atomic-sized color centers in wide-bandgap semiconductors, such as diamond, silicon carbide, and hexagonal boron nitride, are important platforms for quantum technologies, specifically for single-photon sources and quantum sensing. One of the emerging applications of these quantum emitters is subdiffraction imaging. This capability is provided by the specific photophysical properties of color centers, such as high dipole moments, photostability, and a variety of spectral ranges of the emitters with associated optical and microwave control of their quantum states. We review applications of color centers in traditional super-resolution microscopy and quantum imaging methods, and compare relative performance. The current state and perspectives of their applications in biomedical, chemistry, and material science imaging are outlined.
Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.
Abstract Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single‐photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.
The exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Sources of single photons are extremely important across many applications as they can serve as vectors for quantum information—thereby allowing long-range (perhaps even global-scale) quantum states to be made and manipulated for tasks such as quantum communication or distributed quantum computation. At the single-emitter level, quantum sources also afford new possibilities in terms of nanoscopy and bio-marking. Color centers in diamond are prominent candidates to generate and manipulate quantum states of light, as they are a photostable solid-state source of single photons at room temperature. In this review, we discuss the state of the art of diamond-based single-photon emitters and highlight their fabrication methodologies. We present the experimental techniques used to characterize the quantum emitters and discuss their photophysical properties. We outline a number of applications including quantum key distribution, bio-marking and sub-diffraction imaging, where diamond-based single emitters are playing a crucial role. We conclude with a discussion of the main challenges and perspectives for employing diamond emitters in quantum information processing.
Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.
Quantum photonics is an emerging field of photonics where single photons are used for applications in quantum computation, quantum communication, and quantum sensing. One of the key enablers of these new technologies is colour centres. Colour centres are isolated defects in crystals that are able to emit single photons and have spin properties that can be exploited for quantum technologies. These properties include high brightness, low photo-bleaching, and room-temperature optically accessible spins. Wide-bandgap semiconductors such as diamond, silicon carbide and gallium nitride, and 2D materials such as h-BN and TMDs are of particular interest as host materials for colour centres. Numerous light emitters have been discovered and documented in these materials. Colour centres typically occur naturally in semiconductors and are often introduced during the growth process. This random distribution of defects is clearly not desirable for making quantum devices as it makes it difficult to process the materials and introduce structures that interact with these defects such as electrical contacts. The key technology that allows for the precise engineering of colour centres and other quantum defects in materials is ion implantation. Ion implantation utilizes energetic ion beams for the modification of electrical, optical, and magnetic properties of materials. It is a key processing step that has been widely used in the semiconductor industry for doping of semiconductors and for creating buried oxides. Ion implanters that are currently used in industry are designed for uniform wafer-level implantation of relatively large fluences of ions with high beam currents. The new quantum technologies, such as quantum computing, require a major paradigm shift in the way in which ion implantation is performed.
Abstract Powered by the mutual developments in instrumentation, materials and theoretical descriptions, sensing and imaging capabilities of quantum emitters in solids have significantly increased in the past two decades. Quantum emitters in solids, whose properties resemble those of atoms and ions, provide alternative ways to probing natural and artificial nanoscopic systems with minimum disturbance and ultimate spatial resolution. Among those emerging quantum emitters, the nitrogen vacancy (NV) color center in diamond is an outstanding example due to its intrinsic properties at room temperature (highly-luminescent, photo-stable, biocompatible, highly-coherent spin states). This review article summarizes recent advances and achievements in using NV centers within nano- and single crystal diamonds in sensing and imaging. We also highlight prevalent challenges and material aspects for different types of diamond and outline the main parameters to consider when using color centers as sensors. As a novel sensing resource, we highlight the properties of NV centers as light emitting electrical dipoles and their coupling to other nanoscale dipoles e.g. graphene.