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Probing the Role of Low Temperature Vacuum Baking on Photon Lifetimes in Superconducting Niobium 3-D Resonators

Daniel Bafia, Anna Grassellino, Alexander Romanenko

Published Aug 30, 2021• 1 citation
OpenAlex

Abstract

We discuss a potentially dramatic source of quantum decoherence in three-dimensional niobium superconducting resonators and in two-dimensional transmon qubits that utilize oxidized niobium: an aggravation of two-level system (TLS) induced losses driven by vacuum baking at temperatures and durations typically used in transmon qubit fabrication. By coupling RF measurements on cavities with time-of-flight secondary ion mass spectrometry studies on an SRF cavity cutout, we find that modest vacuum baking (150-200~$^{\circ}$C for 5~min-11~hrs) produces a partially depleted native niobium oxide which likely contains a large concentration of oxygen vacancies that drive TLS losses. Continued baking is found to eliminate this depleted layer and mediate these additional losses.

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We discuss a potentially dramatic source of quantum decoherence in three-dimensional niobium superconducting resonators and in two-dimensional transmon qubits that utilize oxidized niobium: an aggravation of two-level system (TLS) induced losses driven by vacuum baking at temperatures and durations typically used in transmon qubit fabrication. By coupling RF measurements on cavities with time-of-flight secondary ion mass spectrometry studies on an SRF cavity cutout, we find that modest vacuum baking (150-200~∘^{\circ}∘C for 5min-11hrs) produces a partially depleted native niobium oxide which likely contains a large concentration of oxygen vacancies that drive TLS losses. Continued baking is found to eliminate this depleted layer and mediate these additional losses.
We identify a major source of quantum decoherence in three-dimensional superconducting radio-frequency (SRF) resonators and two-dimensional transmon qubits composed of oxidized niobium: oxygen vacancies in the niobium pentoxide, which drive two-level system (TLS) losses. By probing the effect of sequential in situ vacuum-baking treatments on the rf performance of bulk Nb\mathrm{Nb}Nb SRF resonators and on the oxide structure of a representative Nb\mathrm{Nb}Nb sample using TOF SIMS, we find a nonmonotonic evolution of cavity quality factor Q0{Q}_{0}Q0​, which correlates with the interplay of Nb2O5{\mathrm{Nb}}_{2}{\mathrm{O}}_{5}Nb2​O5​ vacancy generation and oxide-thickness reduction. We localize this effect to the oxide itself and present the insignificant role of diffused interstitial oxygen in the underlying Nb\mathrm{Nb}Nb by regrowing the oxide via wet oxidation, which reveals a mitigation of aggravated TLS losses. We hypothesize that such vacancies in the pentoxide serve as magnetic impurities and are a source of TLS-driven rf loss.
Superconducting qubits have arisen as a leading technology platform for quantum computing which is on the verge of revolutionizing the world's calculation capacities. Nonetheless, the fabrication of computationally reliable qubit circuits requires increasing the quantum coherence lifetimes, which are predominantly limited by the dissipations of two-level system (TLS) defects present in the thin superconducting film and the adjacent dielectric regions. In this paper, we demonstrate the reduction of two-level system losses in three-dimensional superconducting radio frequency (SRF) niobium resonators by atomic layer deposition (ALD) of a 10 nm aluminum oxide Al2O3 thin films followed by a high vacuum (HV) heat treatment at 650 °C for few hours. By probing the effect of several heat treatments on Al2O3-coated niobium samples by X-ray photoelectron spectroscopy (XPS) plus scanning and conventional high resolution transmission electron microscopy (STEM/HRTEM) coupled with electron energy loss spectroscopy (EELS) and (EDX) , we witness a dissolution of niobium native oxides and the modification of the Al2O3-Nb interface, which correlates with the enhancement of the quality factor at low fields of two 1.3 GHz niobium cavities coated with 10 nm of Al2O3.
Superconducting qubits have arisen as a leading technology platform for quantum computing, which is on the verge of revolutionizing the world's calculation capacities. Nonetheless, the fabrication of computationally reliable qubit circuits requires increasing the quantum coherence lifetimes, which are predominantly limited by the dissipations of two-level system defects present in the thin superconducting film and the adjacent dielectric regions. In this paper, we demonstrate the reduction of two-level system losses in three-dimensional superconducting radio frequency niobium resonators by atomic layer deposition of a 10 nm aluminum oxide Al2O3 thin films, followed by a high vacuum heat treatment at 650 °C for few hours. By probing the effect of several heat treatments on Al2O3-coated niobium samples by x-ray photoelectron spectroscopy plus scanning and conventional high resolution transmission electron microscopy coupled with electron energy loss spectroscopy and energy dispersive spectroscopy, we witness a dissolution of niobium native oxides and the modification of the Al2O3-Nb interface, which correlates with the enhancement of the quality factor at low fields of two 1.3 GHz niobium cavities coated with 10 nm of Al2O3.
Materials imperfections in Nb -based superconducting quantum circuits—in particular, two-level-system (TLS) defects—are a major source of decoherence, ultimately limiting the performance of quantum computation and sensing. Thus, identifying and understanding the microscopic origin of possible TLS defects in these devices will help develop strategies that eliminate them, which are key to superconducting qubit performance improvement. In this paper, we demonstrate an order-of-magnitude reduction in two-level system losses in three-dimensional superconducting radio frequency (SRF) niobium resonators by a 10-h high vacuum (HV) heat treatment at 650 °C, even after exposure to air and high-pressure rinsing (HPR). X-ray photoelectron spectroscopy (XPS) and high-resolution scanning transmission electron microscopy (STEM) reveal an alteration of the native oxide composition regrown after air exposure and HPR and the creation of nanoscale crystalline oxide regions, which correlates with the measured tenfold quality factor enhancement at low fields of the 1.3 GHz niobium resonator. Tunneling spectroscopy measurements show a pronounced proximity effect that further confirms the presence of metallic layers on the niobium surface.
Very-high-quality-factor superconducting radio-frequency cavities developed for accelerators can enable fundamental physics searches with orders of magnitude higher sensitivity, and they can also offer a path to a 1000-fold increase in the achievable coherence times for cavity-stored quantum states in three-dimensional circuit QED architecture. Here we report measurements of multiple accelerator cavities of resonant frequencies of f0=1.3{f}_{0}=1.3f0​=1.3, 2.6, 5 GHz down to temperatures of about 10 mK and field levels down to a few photons, which reveal very long photon lifetimes up to 2 s, while also further exposing the role of the two-level systems (TLS) in niobium oxide. We also demonstrate how the TLS contribution can be greatly suppressed by vacuum heat treatments at 340--450 ${}^{\ensuremath{\circ}}\mathrm{C}$.
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin superconducting film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated through slight modifications in the processing and vacuum conditions. We find that when the Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species, such as niobium hydrides and carbides, are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impacts the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.