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Estimations of the electron-phonon coupling parameters of the spectral lines in GaAs: Er3+ and Y3Al5O12:Yb3+

Xianxin Wu, Min Cheng

Published Jun 10, 2021• 2 citations
Publisher
DOI
10.1016/j.ijleo.2021.167423

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Dynamic Processes in the Line Shift and Linewidth of CaF₂ and CsCdBr₃ Doped with Er³⁺

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The linewidths and line positions of 4I15/2 to 4I13/2 absorption transitions of trivalent erbium in CsCdBr₃ and CaF₂ were measured as a function of temperature from approximately 10 K to 300 K. By comparing the temperature dependence of these transitions with theoretical models of electron-phonon coupling the primary mechanism involved were determined. For Er3+ doped CaF₂ the Raman scattering processes dominated the line broadening, although the single-phonon direct processes were significant enough to drastically alter the values of the Raman scattering electron-phonon coupling constant. In comparison, the Er³⁺ doped CsCdBr₃ had negligible Raman scattering contributing to the line broadening. This is likely due to the exceedingly low Debye temperature and consequently low number of phonons, reducing the likelihood of two-phonon processes relative to single-phonon processes. The results were then analysed in terms of the bond length with the ligands and compared with other studies showing that as the bond length gets shorter the electron-phonon coupling constant associated with Raman scattering is expected to get smaller. To explain the line shifts in CaF₂:Er³⁺ it is necessary to treat the Debye temperature as a parameter. This indicates that the phonon modes causing the line shifts are different from those causing the line broadening, and in most of the cases are vibronic processes rather than Raman processes. In the case of CsCdBr₃:Er³⁺ there is very little difference between the fits using the fixed Debye temperature and a varied Debye temperature in over half of the cases examined. Given the distribution of phonon modes, it is likely that this small difference arises because combinations of these processes are of similar intensity, meaning that a combination of Raman and optical phonon modes are likely causing the line shift.

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The results of a series of pump–probe spectral hole-burning experiments are presented on Yb3+- or Er3+-doped Li6Y(BO3)3 (LYB) single crystals in the temperature range of 2–14 K and 9–28 K, respectively. The spectral hole has a complex structure for Yb3+ with superposed narrow and broad bands, while a single absorption hole has been observed for Er3+. Population relaxation times (T1) at about 850 ± 60 μs and 1010 ± 50 μs and dipole relaxation times (T2) with values of 1100 ± 120 ns and 14.2 ± 0.3 ns have been obtained for the two components measured for the Yb3+:2F7/2—2F5/2 transition. T1 = 402 ± 8 μs and T2 = 11.9 ± 0.2 ns values have been found for the Er3+:4I15/2—4I11/2 excitation. The spectral diffusion rate at about 1 and 5 MHz/ms has been determined for the narrow and broad spectral line in Yb3+-doped crystal, respectively. The temperature dependence of the spectral hole halfwidth has also been investigated.

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MODELING RESONANT ELECTRON-PHONON INTERACTION FOR RARE EARTHS IONS IN LASER CRYSTALS: Victor CIOBU Universitatea de Stat din Moldova

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Effects of the electron-phonon interaction for rare earth ions (RE) in crystals are multi-phonon relaxation, vibronic bands, band broadening depending on temperature or non-resonant energy transfer assisted by phonons. Since the Stark splitting for RE ions are of the order of lattice phonon energy, it could arise and other related effects, especially in the approximation of quasi-resonant processes. If the distance between two Stark levels is close to the region of resonance phonon spectrum, then electron-phonon interaction creates mixed vibronic states, which causes changes in the optical spectral lines (widening, asymmetry, splitting or displacement). The modeling of interaction of the electron-phonon resonance for RE ion Yb3+ in three different laser crystals is the purpose of this paper. Keywords: electron-phonon interaction, rare earth ions, adaptive application.

Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice)•Mar 23, 2016•0 citations
The linewidths and line positions of 4I15/2 to 4I13/2 absorption transitions of trivalent erbium in CsCdBr₃ and CaF₂ were measured as a function of temperature from approximately 10 K to 300 K. By comparing the temperature dependence of these transitions with theoretical models of electron-phonon coupling the primary mechanism involved were determined. For Er3+ doped CaF₂ the Raman scattering processes dominated the line broadening, although the single-phonon direct processes were significant enough to drastically alter the values of the Raman scattering electron-phonon coupling constant. In comparison, the Er³⁺ doped CsCdBr₃ had negligible Raman scattering contributing to the line broadening. This is likely due to the exceedingly low Debye temperature and consequently low number of phonons, reducing the likelihood of two-phonon processes relative to single-phonon processes. The results were then analysed in terms of the bond length with the ligands and compared with other studies showing that as the bond length gets shorter the electron-phonon coupling constant associated with Raman scattering is expected to get smaller. To explain the line shifts in CaF₂:Er³⁺ it is necessary to treat the Debye temperature as a parameter. This indicates that the phonon modes causing the line shifts are different from those causing the line broadening, and in most of the cases are vibronic processes rather than Raman processes. In the case of CsCdBr₃:Er³⁺ there is very little difference between the fits using the fixed Debye temperature and a varied Debye temperature in over half of the cases examined. Given the distribution of phonon modes, it is likely that this small difference arises because combinations of these processes are of similar intensity, meaning that a combination of Raman and optical phonon modes are likely causing the line shift.
The results of a series of pump–probe spectral hole-burning experiments are presented on Yb3+- or Er3+-doped Li6Y(BO3)3 (LYB) single crystals in the temperature range of 2–14 K and 9–28 K, respectively. The spectral hole has a complex structure for Yb3+ with superposed narrow and broad bands, while a single absorption hole has been observed for Er3+. Population relaxation times (T1) at about 850 ± 60 μs and 1010 ± 50 μs and dipole relaxation times (T2) with values of 1100 ± 120 ns and 14.2 ± 0.3 ns have been obtained for the two components measured for the Yb3+:2F7/2—2F5/2 transition. T1 = 402 ± 8 μs and T2 = 11.9 ± 0.2 ns values have been found for the Er3+:4I15/2—4I11/2 excitation. The spectral diffusion rate at about 1 and 5 MHz/ms has been determined for the narrow and broad spectral line in Yb3+-doped crystal, respectively. The temperature dependence of the spectral hole halfwidth has also been investigated.
Effects of the electron-phonon interaction for rare earth ions (RE) in crystals are multi-phonon relaxation, vibronic bands, band broadening depending on temperature or non-resonant energy transfer assisted by phonons. Since the Stark splitting for RE ions are of the order of lattice phonon energy, it could arise and other related effects, especially in the approximation of quasi-resonant processes. If the distance between two Stark levels is close to the region of resonance phonon spectrum, then electron-phonon interaction creates mixed vibronic states, which causes changes in the optical spectral lines (widening, asymmetry, splitting or displacement). The modeling of interaction of the electron-phonon resonance for RE ion Yb3+ in three different laser crystals is the purpose of this paper. Keywords: electron-phonon interaction, rare earth ions, adaptive application.