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2D Materials

A high- T c van der Waals superconductor based photodetector with ultra-high responsivity and nanosecond relaxation time

Paul Seifert, José Ramón Durán Retamal, Rafael Luque Merino, Hanan Herzig Sheinfux, John N. Moore, Mohammed Ali Aamir, Takashi Taniguchi, Kenji Watanabe, Kazuo Kadowaki, M. Artiglia, M. Romagnoli, Dmitri K. Efetov

Published Jun 2, 2021• 19 citations
Publisher

Abstract

Abstract Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a high- T c superconducting photodetector, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77 K, with a responsivity of 9.61 × 10 4 V W −1 , theoretically achievable noise equivalent power of 15.9 fW Hz 1/2 and nanosecond relaxation times. At 15 K the detector reaches an ultra-high performance of 2.33 × 10 7 V W −1 and 55.2 aW Hz 1/2 . It is based on van der Waals heterostructures of the high temperature superconductor Bi 2 Sr 2 CaCu 2 O 8+ δ , which are shaped into nano-wires with ultra-small form factor using focused helium ion beam irradiation. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its possible potential for photonics based quantum applications.

DOI
10.1088/2053-1583/ac072f

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We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m.

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Abstract Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a high- T c superconducting photodetector, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77 K, with a responsivity of 9.61 × 10 4 V W −1 , theoretically achievable noise equivalent power of 15.9 fW Hz 1/2 and nanosecond relaxation times. At 15 K the detector reaches an ultra-high performance of 2.33 × 10 7 V W −1 and 55.2 aW Hz 1/2 . It is based on van der Waals heterostructures of the high temperature superconductor Bi 2 Sr 2 CaCu 2 O 8+ δ , which are shaped into nano-wires with ultra-small form factor using focused helium ion beam irradiation. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its possible potential for photonics based quantum applications.
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and radio-astronomy. However, their broader use is held back by the low operation temperatures which require expensive cryostats. Here, we demonstrate a nitrogen cooled superconducting transition edge sensor, which shows orders of magnitude improved performance characteristics of any superconducting detector operated above 77K, with a responsivity of 9.61x10^4 V/W, noise equivalent power of 15.9 fW/Hz-1/2 and operation speeds up to GHz frequencies. It is based on van der Waals heterostructures of the high temperature superconductor Bi2Sr2CaCu2O8, which are shaped into nano-wires with ultra-small form factor. To highlight the versatility of the detector we demonstrate its fabrication and operation on a telecom grade SiN waveguide chip. Our detector significantly relaxes the demands of practical applications of superconducting detectors and displays its huge potential for photonics based quantum applications.
Abstract Detecting light at the single-photon level is one of the pillars of emergent photonic technologies. This is realized through state-of-the-art superconducting detectors that offer efficient, broadband and fast response. However, the use of low T C superconducting thin films limits their operation temperature to approximately 4 K and below. Here, we demonstrate proof-of-concept nanodetectors based on exfoliated, two-dimensional cuprate superconductor Bi2Sr2CaCu2O8-δ that exhibit single-photon sensitivity at telecom wavelength at a record temperature of T = 20 K. These non-optimized devices exhibit a slow ∼ m s reset time and a low detection efficiency ( ∼ 10 − 4 ). We realize the elusive prospect of single-photon sensitivity on a high-T C nanodetector thanks to a novel approach, combining van der Waals fabrication techniques and a non-invasive nanopatterning based on light ion irradiation. This result paves the way for broader application of single-photon technologies, relaxing the cryogenic constraints for single-photon detection at telecom wavelength.
Detecting light at the single-photon level is one of the pillars of emergent photonic technologies. This is realized through state-of-the-art superconducting detectors that offer efficient, broadband and fast response. However, the use of superconducting thin films with low TC limits their operation temperature below 4K. In this work, we demonstrate proof-of-concept nanodetectors based on exfoliated, two-dimensional cuprate superconductor Bi2Sr2CaCu2O8-δ (BSCCO) that exhibit single-photon sensitivity at telecom wavelength at a record temperature of T = 20K. These non-optimized devices exhibit a slow (ms) reset time and a low detection efficiency (10^(-4)). We realize the elusive prospect of single-photon sensitivity on a high-TC nanodetector thanks to a novel approach, combining van der Waals fabrication techniques and a non-invasive nanopatterning based on light ion irradiation. This result paves the way for broader application of single-photon technologies, relaxing the cryogenic constraints for single-photon detection at telecom wavelength.
Superconducting devices offer the potential to perform at speeds and detection efficiencies higher than what is possible using conventional technologies (such as semiconducting avalanche photodiodes and photomultiplier tubs) for wavelengths from the ultraviolet to the mid-infrared. As a result, there has been increasing interest in using superconducting optical photon detectors in a variety of applications. There has been significant progress in using these types of detectors in areas of basic research such as quantum information science and quantum optics. These applications require detectors that have extremely low dark count rates, high count rates, and high quantum efficiency. I will begin by describing some of our earlier work on superconducting Transition-Edge Sensor (TES). In particular, I will describe some of the engineering involved in the cryogenic, electrical, and optical packaging so that these devices can be easily coupled into fiber-based optics. I will also describe our recent work on developing superconducting nanowire single photon detectors (SNSPD or SSPD). An SNSPD is an ultra-thin, ultra-narrow (nm scale) superconducting meander that is current biased just below its critical current density. When one or more photon is absorbed, a hot spot is formed that causes the superconductor to develop a resistance and consequently a voltage pulse. At NIST and JPL, we have been developing nanowire detectors using an amorphous alloy of tungsten-silicide. We will describe to construct systems using tungsten-silicide nanowires to achieve high detection efficiency (>90% at 1550nm). I will also describe our work to improve the performance of the device by fabricating multiple nanowires in an electrically parallel structure to implement a superconducting nanowire avalanche photodiode (SNAP)[1]. One example of this type of detector is shown in Fig 1. In this case, there are two tungsten silicide layers separated by a dielectric layer to optimize detection of light for any polarization[2]. In addition, progress on other types of SNAP detectors will be described to increase the signal size from a single photon, reduce the recovery time of the device, and to improve the jitter.
Superconducting detectors become the most prominent technology for radiation sensors with ultimate performance. Typically, they are nanostructures formed from an ultra-thin superconducting film incorporated into an external antenna for efficient radiation coupling. The operation of so-called hot-electron bolometers and photodetectors (HEBs and HEPs) is based on nonequilibrium heating of the electron subsystem by the absorbed radiation and results in the film resistance and a corresponding, easily measurable voltage response when device is current biased [1-2]. A relatively simple, single-layer manufacturing technology made these devices very popular for needs of radioastronomy and remote sensing.
We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m.