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Highly aligned 2D NV ensemble fabrication from nitrogen-terminated (111) surface

Tetsuya Tatsuishi, Kyotaro Kanehisa, Taisuke Kageura, Takahiro Sonoda, Yuki Hata, Kazuto Kawakatsu, Takashi Tanii, Shinobu Onoda, Alastair D. Stacey, Shozo Kono, Hiroshi Kawarada

Published Apr 28, 2021• 12 citations
Publisher
DOI
10.1016/j.carbon.2021.04.057

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We report the formation of perfectly aligned, high-density, shallow nitrogen vacancy (NV) centers on the (111) surface of a diamond. The study involved step-flow growth with a high flux of nitrogen during chemical vapor deposition (CVD) growth, which resulted in the formation of a highly concentrated (>1019 cm−3) nitrogen layer approximately 10 nm away from the substrate surface. Photon counts obtained from the NV centers indicated the presence of 6.1 × 1015–3.1 × 1016 cm−3 NV centers, which suggested the formation of an ensemble of NV centers. The optically detected magnetic resonance (ODMR) spectrum confirmed perfect alignment (more than 99%) for all the samples fabricated by step-flow growth via CVD. Perfectly aligned shallow ensemble NV centers indicated a high Rabi contrast of approximately 30% which is comparable to the values reported for a single NV center. Nanoscale nuclear magnetic resonance demonstrated surface-sensitive nuclear spin detection and provided a confirmation of the NV centers' depth. Single NV center approximation indicated that the depth of the NV centers was approximately 9–10.7 nm from the surface with error of less than ±0.8 nm. Thus, a route for material control of shallow NV centers has been developed by step-flow growth using a CVD system. Our finding pioneers on the atomic level control of NV center alignment for large area quantum magnetometry.

arXiv:1704.03642•Applied Physics Letters•Jul 24, 2017•60 citations
We established the method to fabricate two-dimensional (2D) shallow NV ensemble. We realized nitrogen-terminated (111) diamond surface with nitrogen radical exposure and grew very thin (approximately 10 nm) diamond film on the surface by microwave plasma-enhanced chemical vapor deposition (MPCVD). We counted the number of NV ensembles aligned in [111] direction of the NV ensembles which we observed. The probability of NV ensemble being aligned in [111] was 42 %. On the other hand, we changed the surface condition of N-terminated (111) diamond by thermal annealing. Then, we grew 10 nm diamond film on the surface. As a result, the probability of NV ensemble being aligned in [111] rose to 60 %. Also, s-factor developed from 0.44 to 0.52.
We report the formation of perfectly aligned, high-density, shallow nitrogen vacancy (NV) centers on the (111) surface of a diamond. The study involved step-flow growth with a high flux of nitrogen during chemical vapor deposition (CVD) growth, which resulted in the formation of a highly concentrated (>1019 cm−3) nitrogen layer approximately 10 nm away from the substrate surface. Photon counts obtained from the NV centers indicated the presence of 6.1 × 1015–3.1 × 1016 cm−3 NV centers, which suggested the formation of an ensemble of NV centers. The optically detected magnetic resonance (ODMR) spectrum confirmed perfect alignment (more than 99%) for all the samples fabricated by step-flow growth via CVD. Perfectly aligned shallow ensemble NV centers indicated a high Rabi contrast of approximately 30% which is comparable to the values reported for a single NV center. Nanoscale nuclear magnetic resonance demonstrated surface-sensitive nuclear spin detection and provided a confirmation of the NV centers' depth. Single NV center approximation indicated that the depth of the NV centers was approximately 9–10.7 nm from the surface with error of less than ±0.8 nm. Thus, a route for material control of shallow NV centers has been developed by step-flow growth using a CVD system. Our finding pioneers on the atomic level control of NV center alignment for large area quantum magnetometry.