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Quantum Computation: High-fidelity Quantum Gates on Quantum Dot Qubits in the Presence of 1/F Charge Noise Using Strong Drives, Numerical and Analytical Analysis

Yuan‐Chi Yang

Published Jan 1, 2019• 0 citations
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Abstract Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities falling below 90%. Here we develop analytical methods to study the evolution of strongly driven charge qubits, for general and 1/ f charge-noise spectra. We show that special pulsing techniques can simultaneously suppress errors due to strong driving and charge noise, yielding single-qubit gates with fidelities above 99.9%. These results demonstrate that quantum dot charge qubits provide a potential route to high-fidelity quantum computation.

arXiv:1806.02413•npj Quantum Information•Jan 31, 2019•56 citations
Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than 99.999.9%99.9.
High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with 1/f1/f1/f Charge Noise
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve XπX_{\pi}Xπ​ gates with fidelities higher than 99.9%99.9\%99.9%.
Abstract Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities falling below 90%. Here we develop analytical methods to study the evolution of strongly driven charge qubits, for general and 1/ f charge-noise spectra. We show that special pulsing techniques can simultaneously suppress errors due to strong driving and charge noise, yielding single-qubit gates with fidelities above 99.9%. These results demonstrate that quantum dot charge qubits provide a potential route to high-fidelity quantum computation.