Abstract Superconducting nanowire single-photon detectors (SNSPDs) made of ultrathin δ -NbN films have been widely applied in both visible and infrared wavelengths. For mid-infrared (MIR) wavelengths, SNSPDs made of tungsten silicide films with a lower critical temperature were reported up to 9.9 μ m wavelength. In this study, we demonstrate the potential of NbN-SNSPDs for use in MIR applications. SNSPDs made of γ -Nb 4 N 3 films (critical temperature of 5.1 K for 6.5 nm thick films) instead of δ -NbN films were fabricated. The dependence of the normalized detection efficiency on the bias current indicated a clear trend toward a saturated plateau for wavelengths up to 2145 nm. The calculated cut-off wavelengths indicated the possibility of using γ -Nb 4 N 3 SNSPDs for longer MIR wavelengths.
Abstract Superconducting nanowire single-photon detectors (SNSPDs) made of ultrathin δ -NbN films have been widely applied in both visible and infrared wavelengths. For mid-infrared (MIR) wavelengths, SNSPDs made of tungsten silicide films with a lower critical temperature were reported up to 9.9 μ m wavelength. In this study, we demonstrate the potential of NbN-SNSPDs for use in MIR applications. SNSPDs made of γ -Nb 4 N 3 films (critical temperature of 5.1 K for 6.5 nm thick films) instead of δ -NbN films were fabricated. The dependence of the normalized detection efficiency on the bias current indicated a clear trend toward a saturated plateau for wavelengths up to 2145 nm. The calculated cut-off wavelengths indicated the possibility of using γ -Nb 4 N 3 SNSPDs for longer MIR wavelengths.
Mid-infrared (MIR) single-photon detection is emerging as an important technology for various applications. Superconducting nanowire single photon detectors (SNSPDs) fabricated with superconducting films with energy gaps of a few meV are natural broadband single-photon detectors. Recently, extending SNSPDs’ operation wavelengths into the MIR region is highly attractive. γ-Nb4N3 has a reduced N content and lower energy gap than the commonly used δ-NbN, making SNSPDs based on γ-Nb4N3 film more sensitive to low energy photons. We report on a Nb4N3-SNSPD based on 62-nm wide nanowire, with an optical absorption enhancement design and an optimized device package for efficient ZBLAN fiber coupling and dark count filtering. The developed device has a unity intrinsic detection efficiency (IDE) in the 1.5–4 µm wavelength region, and the device detection efficiency at 2.95 µm was measured to be 32.5%, with an uncertainty of 12.7%. Furthermore, we reduced the device geometry, and measured 3–10 µm photon response of a device based on 5-nm film and 42-nm nanowire, with an IDE of 95%, 81%, 40%, and 6% for 4.8, 6, 8, and 10 µm, respectively.
Superconducting nanowire single photon detectors (SNSPD) offer excellent performance for infrared single photon detection, combining high efficiency, low timing jitter, low dark count rates and high photon counting rates. Promising application areas for SNSPDs include quantum key distribution, space-to-ground communications and single photon remote sensing [1]. SNSPDs are typically made with ultrathin niobium nitride (NbN) films with thickness 4 nm and a superconducting transition temperature above 9 K. NbN offers high performance in the near infrared but their sensitivity drops at wavelengths beyond 2 um. There is growing interest in potential photon counting applications in the mid infrared domain (for example remote sensing of greenhouse gases in the atmosphere [2]). One way to overcome the wavelength limit in NbN SNSPDs is to use films with a lower superconducting energy gap [3]. Here we report on the study of SNSPDs fabricated with thin films of titanium nitride (TiN). We compare TiN films deposited by atomic layer deposition (ALD) and by magnetron sputtering. The TiN films range in thickness from 5 to 60 nm, with superconducting transition temperatures from ~1 K to 3.5 K. We have analyzed the films via transmission electron microscopy and variable angle spectroscopic ellipsometry. We characterize TiN SNSPDs performance from near to mid-infrared at wavelengths (1-4 um) with fast optical parametric oscillator (OPO) source. We compare the performance of TiN SNSPDs to devices based on other lower gap materials: MoSi, NbTiN, WSi. [1] Natarajan et al Superconductor Science and Technology 25 063001 (2012) [2] Abshire et al Laser Applications to Chemical, Security and Environmental Analysis, (Optical Society of America, 2008) paper LMA4 [3] Verma et al Applied Physics Letters 105 022602 (2014)
Superconducting nanowire single-photon detectors (SNSPDs) are among the most sensitive single-photon detectors available and have the potential to transform fields ranging from infrared astrophysics to molecular spectroscopy. However, extending their performance into the mid-infrared spectral region - crucial for applications such as exoplanet transit spectroscopy and vibrational fingerprinting of molecules - has remained a major challenge, primarily due to material limitations and scalability constraints. Here, we report on the development of SNSPDs based on tungsten germanide, a novel material system that combines high mid-infrared sensitivity with compatibility for large-scale fabrication. Our detectors exhibit saturated internal detection efficiency at wavelengths up to 29 μm, while using 2.7x thicker films (8 nm vs 3 nm) and up to 4.5x wider nanowires (360 nm vs 80 nm) compared to mid-infrared-optimized SNSPDs fabricated from tungsten silicide. This advance will enable scalable, high-performance single-photon detection in a spectral region that was previously inaccessible, opening new frontiers in remote sensing, thermal imaging, environmental monitoring, molecular physics, and astronomy.
In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting properties comparable to those of amorphous WSi. The nanowire width ranges from 60 to 90 nm, with a fixed filling factor of 30%. All fabricated devices exhibit saturated intrinsic detection efficiency for infrared photons with wavelengths up to 2 μm, indicating that WGe is a promising candidate for SNSPDs designed for mid- and far-infrared photon detection. The timing jitter of these detectors, measured with a room-temperature amplifier, ranges from 127 to 234.5 ps. Further improvements can be achieved through device geometry optimization or the implementation of cryogenic amplifiers.
Abstract The advancement of superconducting nanowire single-photon detectors (SNSPDs or SSPDs) is intrinsically linked to breakthroughs in superconducting materials engineering. These detectors are prized for their excellent sensitivity and performance across a wide wavelength range, from ultra-violet to mid-infrared (mid-IR). Plasma-enhanced atomic layer deposition (ALD) is an advanced deposition technique that enables exceptional film uniformity across large wafers, making it ideal for a variety of applications. In this study, ALD NbTiN films are fabricated into SNSPDs that exhibit single-photon response across near- to mid-IR wavelengths. A 5 nm thick NbTiN film was patterned into devices consisting of ∼100 nm wide meandered nanowires, and the nanowire cross-section and composition were analysed by transmission electron microscopy. The devices were tested in a closed-cycle cryostat with a base temperature of 0.9 K. Photon detection rate and timing jitter were measured across the wavelength range 1.5–4.4 µ m under low dark count conditions, confirming single-photon sensitivity across the measured wavelength bands. This work introduces the ALD-grown NbTiN films as a new platform for SNSPD detectors, achieving mid-IR single-photon sensitivity. The intact film quality after fabrication demonstrates the potential of ALD processes for scalable infrared detector technologies.
Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.