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Bulletin of the American Physical Society

Investigation into Charge Noise in a Tantalum Transmon on Sapphire Substrate across Higher Energy Levels

Daniel Tennant, Luis A. Martinez, Christopher D. Wilen, R. McDermott, Yaniv Jacob Rosen, Jonathan L. DuBois

Published Mar 16, 2021• 0 citations
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Transmon qubits fabricated with tantalum metal have been shown to possess energy relaxation times greater than 300 μμμs and, as such, present an attractive platform for high precision, correlated noise studies across multiple higher energy transitions. Tracking the multi-level fluctuating qudit frequencies with a precision enabled by the high coherence of the device allows us to extract the charge offset and quasi-particle dynamics. We observe qualitatively different charge offset behavior in the tantalum device than those measured in previous low frequency charge noise studies. In particular, we find the charge offset dynamics are dominated by rare, discrete jumps between a finite number of quasi-stationary charge configurations, a previously unobserved charge noise process in superconducting qubits.
Polycrystalline α-tantalum (110) films deposited on the c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these films always occasionally form other structures, such as α-tantalum (111) grains and β-tantalum grains. To improve the film quality, we investigate the growth of α-tantalum (110) films on the a-plane sapphire substrate under varying conditions by molecular beam epitaxy technology. The optimized α-tantalum (110) film is a single crystal, with a smooth surface and atomically flat metal–substrate interface. The film with thickness of 30 nm shows a Tc of 4.12 K and a high residual resistance ratio of 9.53. The quarter wavelength coplanar waveguide resonators fabricated with the 150 nm optimized α-tantalum (110) film exhibit intrinsic quality factor of over one million under single photon excitation at millikelvin temperature.