Imaging with neutral atoms using a single crystal silicon wafer

Wolfgang Ernst, Bodil Holst, Katrin Fladischer +11 more

U. Patel, Yibo Gao, David J. Hover +3 more

We have incorporated a single crystal silicon shunt capacitor into a Josephson phase qubit. The capacitor is derived from a commercial silicon-on-insulator wafer. Bosch reactive ion etching is used to create a suspended silicon membrane; subsequent metallization on both sides is used to form the capacitor. The superior dielectric loss of the crystalline silicon leads to a significant increase in qubit energy relaxation times. T1 times up to 1.6 μs were measured, more than a factor of two greater than those seen in amorphous phase qubits. The design is readily scalable to larger integrated circuits incorporating multiple qubits and resonators.

Jason R. Reeves

Resist based neutral atom lithography with metastable 23S1 helium(He. ) has been used to produce small structures in both goldand palladium. A beam of He. from a reverse flow, DC dischargesource is collimated by the bichromatic optical force followed bythree optical molasses velocity compression stages. The He. beamthen crosses a region where a mechanical or optical mask createsthe desired pattern.In the first experiments, a self assembled monolayer (SAM) ofnonanethiol is grown on a gold coated silicon wafer and then exposedto the bright, collimated beam of He. after a Nickel micromesh mask. The mesh protects parts of the SAM from the 20 eVof internal energy deposited by the impact of a He. atom onto thesample surface. The pattern of the mesh is transferred into the~200 Å gold layer with a standard selective etch that removes theGold from under the damaged SAM molecules. The samples wereanalyzed with an Atomic Force Microscope and Scanning ElectronMicroscope.The second set of experiments were performed using an opticalmask to pattern a gold coated silicon wafer. In the optical mask,the He. atoms experience the dipole force while traversing a standinglight wave of &lambda1<\sub> = 1083 nm light tuned 490 MHz above the 23S1<\sub>→ 23P2 transition or, in separate experiments, &lambda2<\sub> = 389 nmlight tuned 80 MHz below the 23S1<\sub>→ 33P2 transition. Using theoptical masks, He. can be focused or channeled into parallel linesseparated by &lambda/2 by varying the intensity of the standing lightwave.The small structures created by the 389 nm optical mask beganapproaching the gold surface granularity. A ~200 Å layer of palladium on silicon was chosen as the palladium granularity is muchsmaller and the SAM of nonanethiol will still form on the surface.Experiments using a nickel micro mesh as a mechanical mask havedemonstrated similar features to those in gold.

Karl D. Nelson, Xiao Li, David S. Weiss

Doug Bopp, Vincent N. Maurice, John E. Kitching

Abstract We demonstrate a new technique for filling mm-scale microfabricated silicon and glass cavities with alkali vapors at the wafer-scale. A single etched silicon wafer contains an array of cavities containing alkali precursor materials offset laterally from the cell array. The wafer is heated to create an array of alkali droplets on an upper glass wafer, which is then translated laterally under vacuum and bonded to create the cells. This technique can be implemented in a commercially available bonding tool, allows the fabrication of cells with arbitrary buffer gas contents and pressures and can potentially produce cells with dimensions below 100 µm.

Christian H. Christiansen, Kasper H. Nielsen, Alisha Nanwani +26 more

Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a primary challenge due to stringent material quality requirements. To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers. We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening, yielding optical linewidths as narrow as 30 MHz using natural silicon for crystal growth. These results establish epitaxial T centres as a robust foundation for coherent spin-photon interfaces in silicon quantum photonics.