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Frontiers of Optoelectronics

Homogeneous and inhomogeneous broadening effects on static and dynamic responses of quantum-dot semiconductor optical amplifiers

Hussein, Taleb, Kambiz, Abedi

Published Jan 1, 2012• 0 citations

Abstract

在这份报纸， quantumdot 半导体的反应上的同类、不同类的拓宽的效果光放大器(QD-SOAs ) 被调查。第一次，州的空间模型被用来模仿 QD-SOA 的静态、动态的特征。与减少，同类、不同类的拓宽， QD-SOA 减少的浸透力量和光获得和 ultrafast 获得压缩增加，这被发现。模拟结果与减少显示出那从 20 ～ 1 兆电子伏的同类的拓宽，从 40% ～ 90% 的获得压缩增加，不饱和的光获得变得近似翻三倍，并且浸透力量少些成为 two times。另外，模拟与减少表明那从 50 ～ 25 兆电子伏的不同类的拓宽，从不到 50% 的获得压缩增加到超过 90% ，不饱和的光获得成为近似 10 褶层，和浸透力量成为更少三次。另外，同类、不同类的线宽应该为非线性的应用是小的，这被发现。同类、不同类的拓宽需要为线性应用足够大。

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在这份报纸， quantumdot 半导体的反应上的同类、不同类的拓宽的效果光放大器(QD-SOAs ) 被调查。第一次，州的空间模型被用来模仿 QD-SOA 的静态、动态的特征。与减少，同类、不同类的拓宽， QD-SOA 减少的浸透力量和光获得和 ultrafast 获得压缩增加，这被发现。模拟结果与减少显示出那从 20 ～ 1 兆电子伏的同类的拓宽，从 40% ～ 90% 的获得压缩增加，不饱和的光获得变得近似翻三倍，并且浸透力量少些成为 two times。另外，模拟与减少表明那从 50 ～ 25 兆电子伏的不同类的拓宽，从不到 50% 的获得压缩增加到超过 90% ，不饱和的光获得成为近似 10 褶层，和浸透力量成为更少三次。另外，同类、不同类的线宽应该为非线性的应用是小的，这被发现。同类、不同类的拓宽需要为线性应用足够大。

从作为壁炉量点(QD ) 的光抽射出的单个光子的极化性质被使用一个四水平的系统模型学习。模型能够向极化解释在单个光子排放实验观察的不确定性。泵力量上的光子排放效率和极化可见性的依赖在一般情况中是相反的，这被发现。由与小尺寸和强壮的搬运人监禁采用 QD，在高泵力量下面的光子极化可见性能被改进。另外，嵌入一个很好设计的微洞也被发现赞成的 QDinto，而在高极化可见性和多光子排放之间的交易被注意。

We numerically investigate the effect of inhomogeneous broadening caused by quantum-dot (QD) size fluctuations on the gain and phase recovery of QD semiconductor optical amplifiers (SOAs). We establish 1088 coupled rate equations to simulate the carrier dynamics of the inhomogeneously broadened QD ensembles as inhomogeneous broadening increases. When all the QD ensembles are identical and inhomogeneous broadening becomes zero, eight coupled rate equations are solved for the homogeneous QDs. The gain and phase recovery responses are calculated when an ultrashort pump pulse is injected into a QD SOA. As the inhomogeneous broadening increases, the slow component of the phase recovery at the QD ground state increases due to the enlarged contribution from the slow phase recovery of carrier reservoirs such as the QD excited states. By separately calculating the gain and phase recovery responses of the homogeneous QDs with different sizes, we identify how increasing inhomogeneous broadening affects the enlarged slow phase recovery components from carrier reservoirs. We also demonstrate that the effect of inhomogeneous broadening on the temporal variation of the α-factor is more significant compared to the injection pump power.

In this study, design of optical pumping (OP) scheme for quantum‐dot semiconductor optical amplifiers (QD‐SOAs) is investigated. To evaluate the static and dynamic responses of the QD‐SOA under OP, a non‐linear state‐space model is derived in which the effects of the homogeneous and inhomogeneous broadening of the gain medium and the spectral dependence of the input signals are taken into account. Using this model, the effects of the wavelength and power of the pump signal and the homogeneous and inhomogeneous linewidths are studied in detail. Simulation results demonstrate that optimal operation of the QD‐SOA under the OP scheme is realised if the detuning between the pump wavelength and the input signal wavelength is constant (around 100 nm for our investigated device). The authors found that OP scheme can be employed for non‐linear signal processing applications, where the superiorities of the OP against the electrical pumping appear for small values of the homogeneous and inhomogeneous linewidths.