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Diamond and Related Materials

Low-temperature photoluminescence study of SnV centers in HPHT diamond

A.A. Razgulov, Sergey G. Lyapin, A.P. Novikov, Евгений Алексеевич Екимов

Published Mar 30, 2021• 19 citations
Publisher
DOI
10.1016/j.diamond.2021.108379

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Abstract The properties and creation of optical centers in diamond are essential for applications in quantum technology. Here, we study the photoluminescence (PL) spectroscopy behavior at low temperatures of diamond subjected to electron irradiation and annealing heat treatment. Through temperature variation testing, it was found that the NV − center intensity of diamond with a nitrogen content of 150 ppm before treatment is insensitive to the experimental temperature, but significantly increases with decreasing temperature after treatment, showing sensitivity to temperature. In addition, the H3 center also shows an increasing trend with decreasing temperature. The results of annealing diamond with a nitrogen content of 730 ppm showed that even at a low temperature of 93 K, no NV − centers were detected, but there were a large number of Ni-N related centers, especially NE8 centers. Our findings can promote a deeper understanding of the behavioral characteristics of HPHT-diamond optical centers in low-temperature environments.

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We report the narrow inhomogeneous distribution of the zero-phonon line from tin-vacancy (SnV) centers in diamond and the overlap of spectra from multiple separated SnV centers. Photoluminescence excitation spectroscopy measurements at a cryogenic temperature showed that SnV centers exhibit stable fluorescence and linewidths close to the Fourier transform-limited linewidth. The inhomogeneous distribution was as low as ~4 GHz, which enabled the observation of Sn isotope-dependent resonant frequencies. Owing to the narrow inhomogeneous distribution, we observed multiple SnV centers showing identical photons with almost the same wavelength and linewidth. Identical SnV centers were also observed even in different diamond samples, confirming the reliable fabrication of the high-quality SnV centers.

arXiv:2208.06275•Aug 12, 2022•1 citation
Abstract The properties and creation of optical centers in diamond are essential for applications in quantum technology. Here, we study the photoluminescence (PL) spectroscopy behavior at low temperatures of diamond subjected to electron irradiation and annealing heat treatment. Through temperature variation testing, it was found that the NV − center intensity of diamond with a nitrogen content of 150 ppm before treatment is insensitive to the experimental temperature, but significantly increases with decreasing temperature after treatment, showing sensitivity to temperature. In addition, the H3 center also shows an increasing trend with decreasing temperature. The results of annealing diamond with a nitrogen content of 730 ppm showed that even at a low temperature of 93 K, no NV − centers were detected, but there were a large number of Ni-N related centers, especially NE8 centers. Our findings can promote a deeper understanding of the behavioral characteristics of HPHT-diamond optical centers in low-temperature environments.
Synthetic high-pressure high-temperature (HPHT) microdiamonds demonstrate strong resonant-like enhancement of the NV− photoluminescence (PL) at unexpectedly low concentration of the substitutional nitrogen atoms (NS) of 90 ppm, which is significantly smaller than the ∼250 ppm characteristic for conventional HPHT synthesis. The EPR, Raman, and luminescent spectroscopies, including time-resolved PL, provide evidence that this is due to competition between the increase in PL with increasing concentration of the NV− centers and nonradiative deactivation of these centers by defects induced by the NS in the diamond crystal lattice. It is suggested that the intensity of the NV− center emission can be optimized by the appropriate choice of nitrogen doping concentration which does not substantially disrupt the diamond crystal lattice.
We report the narrow inhomogeneous distribution of the zero-phonon line from tin-vacancy (SnV) centers in diamond and the overlap of spectra from multiple separated SnV centers. Photoluminescence excitation spectroscopy measurements at a cryogenic temperature showed that SnV centers exhibit stable fluorescence and linewidths close to the Fourier transform-limited linewidth. The inhomogeneous distribution was as low as ~4 GHz, which enabled the observation of Sn isotope-dependent resonant frequencies. Owing to the narrow inhomogeneous distribution, we observed multiple SnV centers showing identical photons with almost the same wavelength and linewidth. Identical SnV centers were also observed even in different diamond samples, confirming the reliable fabrication of the high-quality SnV centers.