In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing. Prominent examples are the nitrogen-vacancy (NV) center in diamond, phosphorus dopants in silicon (Si:P), rare-earth ions in solids, and V Si -centers in silicon-carbide. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 4. Surprisingly, the new charge state allows switching of the optical response of single nodes facilitating full individual addressability.
Rare earth ions (REI) in solid materials are among the leading systems for quantum technology applications. However, developing practical REI quantum devices with long-lived coherent states remains challenging due to great growth difficulties of high-quality REI materials and a lack of comprehensive understanding of REI's decoherence mechanisms. Here we realize a record optical coherence time of 421.5
± 10.5
μs for the
7F
0→5D
0 transition and more than 30 hours lifetime for the
7F
0 hyperfine spin states in Eu
3+:Y
2O
3 optical ceramics. We report the elimination of two-level-system induced optical decoherence in short-range ordered crystals. Meanwhile, a new decoherence mechanism caused by new kinds of perturbing magnetic centers is identified below 1.5 K. We further demonstrate the coherent light storage over 5
μs by using the atomic frequency comb protocol. These results open up prospects for the realization of practical quantum memories and large scale quantum communications with REI optical ceramics.