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Semiconductor Science and Technology

CMOS charge qubits and qudits: entanglement entropy and mutual information as an optimization method to construct CNOT and SWAP Gates

Panagiotis Giounanlis, Xutong Wu, Andrii Sokolov, Nikolaos Petropoulos, Eugene Koskin, Imran Bashir, Dirk R. Leipold, Robert Bogdan Staszewski, Elena Blokhina

Published Feb 11, 2021• 8 citations
Publisher

Abstract

Abstract In this paper, we propose an optimization method for the construction of two-qubit and two-qudit quantum gates based on semiconductor position-based charge qubits. To describe the evolution of various quantum states, we use a Hubbard based model and Lindblad formalism. The suggested optimization algorithm uses the time evolution of entanglement entropy and mutual information for the determination of the system parameters to achieve high fidelity gates.

DOI
10.1088/1361-6641/abe550

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Abstract In this paper, we propose an optimization method for the construction of two-qubit and two-qudit quantum gates based on semiconductor position-based charge qubits. To describe the evolution of various quantum states, we use a Hubbard based model and Lindblad formalism. The suggested optimization algorithm uses the time evolution of entanglement entropy and mutual information for the determination of the system parameters to achieve high fidelity gates.
CMOS technologies facilitate the possibility of implementing quantum logic in silicon. In this work, we discuss a minimalistic modelling of entangled photon communication in semiconductor qubits. We demonstrate that electrostatic actuation is sufficient to construct and control desired potential energy profiles along a Si quantum dot (QD) structure allowing the formation of position-based qubits. We further discuss a basic mathematical formalism to define the position-based qubits and their evolution under the presence of external driving fields. Then, based on Jaynes–Cummings–Hubbard formalism, we expand the model to include the description of the position-based qubits involving four energy states coupled with a cavity. We proceed with showing an anti-correlation between the various quantum states. Moreover, we simulate an example of a quantum trajectory as a result of transitions between the quantum states and we plot the emitted/absorbed photos in the system with time. Lastly, we examine the system of two coupled position-based qubits via a waveguide. We demonstrate a mechanism to achieve a dynamic interchange of information between these qubits over larger distances, exploiting both an electrostatic actuation/control of qubits and their photon communication. We define the entanglement entropy between two qubits and we find that their quantum states are in principle entangled.
In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubit, its Bloch sphere, and relation with maximally localized Wannier functions which define its position-based nature. We then demonstrate how to build a tight-binding model of single and multiple interacting qubits from first principles of the Schrödinger formalism. We provide all required formulae to calculate the maximally localized functions and the entries of the Hamiltonian matrix in the presence of interaction between qubits. We use three illustrative examples to demonstrate the electrostatic interaction of electrons and discuss how to build a model for many-electron (qubit) system. To conclude this study, we show that charge qubits can be entangled through electrostatic interaction.
In this theoretical manuscript I propose a scheme for entangling a single-electron-semiconductor spin qubit with a single-electron-semiconductor charge qubit in a triangular triple-quantum-dot configuration. Two out of three quantum dots are used to define a single-electron-semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sublevels of the third quantum dot. Combining single-qubit gates with entangling controlled-not gates allows one to construct a swap gate and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes used for conventional chips, once the QP design is suitably specified. There is a vast accessible design space; to identify the most promising options for fabrication, one requires predictive modeling of interacting electrons in real geometries and complex nonideal environments. In this work we explore a modeling method based on real-space grids, an approach without assumptions relating to device topology and therefore with wide applicability. Given an electrode geometry, we determine the exchange coupling between quantum dot qubits, and model the full evolution of a SWAP gate to predict qubit loss and infidelity rates for various voltage profiles. We determine full, three-dimensional solutions and introduce a method that can obtain near-identical predictions using far more efficient two-dimensional computations. Moreover we explore the impact of unwanted charge defects (static and dynamic) in the environment, and test robust pulse sequences. As an example we exhibit a sequence correcting both systematic errors and (unknown) charge defects, observing an order of magnitude boost in fidelity. The technique can thus identify the most promising device designs for fabrication, as well as bespoke control sequences for each such device.
An important result from the mid nineties shows that any unitary evolution may be realized as a sequence of controlled-not and one-qubit gates. This work surveys especially efficient circuits in this library, in the special case of evolutions on two-quantum bits. In particular, we show that to construct an arbitrary two-qubit state from |00>, one CNOT gate suffices. To simulate an arbitrary two-qubit operator up to relative phases, two CNOTs suffice. To simulate an arbitrary two-qubit operator up to global phase, three CNOTs suffice. In each case, we construct an explicit circuit and prove optimality in the generic case. We also contribute a procedure to determine the minimal number of CNOT gates necessary to simulate a given two-qubit operator up to global phase. We use this procedure to discuss timing a given Hamiltonian to simulate the CNOT and to determine an optimal circuit for the two-qubit Quantum Fourier Transform. Our constructive proofs amount to circuit synthesis algorithms and have been coded in C++.
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit gate, such as a controlled-NOT (CNOT) gate. Semiconductor quantum dot qubits are a leading approach for the physical implementation of quantum computation, due to their potential for large-scale integration. Two-qubit gate operations have been so far only demonstrated in individual electron spin-based quantum dot systems. Due to the relatively short de-coherence time, charge qubits in quantum dots are generally considered to be inferior for going beyond single qubit level. Here, we demonstrate the benchmarking CNOT gate in two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 5GHz has been realized. A processing tomography shows encouragingly that the universal two-qubit gate operations have comparable fidelities to that of spin-based two-qubit gates. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.