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Electronic and photonic states in inhomogeneous media

Aram Galstyan

Published Dec 1, 2000• 0 citations
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Many papers on semiconductor gain media have presented models for two-level homogeneously and inhomogeneously broadened media. In this paper, we show why and where these models become inadequate. The problems originate from the fact that the two-band semiconductor gain medium is an inhomogeneously broadened four-level medium with rapid cross relaxation due to carrier-carrier scattering, and all four levels have appreciable probability in gain media. The four states are given by |n e n h k s>, where n e (= 0 or 1) and n h (= 0 or 1) are the number of electrons or holes, respectively, for momentum k and spin s. The two-level system is a one-electron system with no states corresponding to the partially excited semiconductor states |0 e 1 h k> and |l e 0 h k>, which involve two electrons. The Pauli exclusion principle never gets a chance to enter the picture. In the absence of many-body effects, semiconductor gain can be fitted in an ad hoc fashion by a two-level model, but problems that involve the level probabilities individually, such as the laser photon statistics, elude a two-level description.
An analysis and model calculations are presented to clarity how both the electronic and vibrational inhomogeneities with no correlation between them influence the most relevant resonant steady-state third-order nonlinear optical mixing processes (CARS, CSRS, polarization spectroscopy and Raman gain (loss)).It is shown that all these processes may be divided into three groups: 1) processes yielding almost homogeneous spectra: both inhomogeneities are greatly reduced; 2) processes yielding quasihomo- geneous spectra: inhomogeneities are present, but the electronic one is not manifest in the spectrum; 3) processes yielding completely inhomogeneous spectra.The suppression of inhomogeneous broadening allows to study the excited electronic states and the ultrafast relaxation processes in inhomogeneous media more effectively than in linear spectroscopy. * About another steady-state frequency domain technique byhot luminescence measurements for the study of ultrafast energy relaxation see.e. g. f l4 ].ЁЁЗТТ NSV TEADUSTE AKADEEMIA TOIMETISED.30.