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OSA Quantum 2.0 Conference

Single Ion Implanted Silicon Devices Towards Few Photons Emission Regime For Space Quantum Communications

Enrico Prati, Takahiro Shinada, Takashi Tanii

Published Jan 1, 2020• 1 citation
Publisher

Abstract

Employment of erbium in silicon devices suffers of difficulties preventing to act as reliable photon source. We review the convergence between single ion implantation and few photon emission regime at room temperature at 1550 nm.
DOI
10.1364/quantum.2020.qth7b.10

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