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Pisma v Zhurnal Tekhnischeskoi Fiziki

Low-temperature optical bistability of photocurrent in gallium arsenide

Oleg A. Ryabushkin, В. И. Сергеев

Published Jun 1, 1987• 0 citations
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The fundamental limitations on the operation of optical bistable devices in a ring cavity and in GaAs etalons are investigated. Experimental results of spontaneous transitions due to shot noise fluctuations are found in good agreement with various "ladder" models, if one allows the counting rates to vary accordingly. Stability analysis for two-photon homogeneously broadened media reveals single-wavelength instabilities for the laser but not for absorptive optical bistability. Appreciable regions of sidemode gain exist for both problems allowing for multiwavelength instabilities to occur. GaAs bistable devices show attractive features such as low power and high speed at room temperature for optical processing. However, experimental evidence in GaAs confirm the computer simulations of bistability that cavity losses, due to unsaturable background absorption, limit the switching power at room temperature. Methods to overcome the different limitations in GaAs devices toward parallel computation are then addressed from a system approach.
We drive a high-efficiency gallium arsenide light emitting diode (LED) with a low-noise current and measure the noise in the detected photocurrent from a high-quantum-efficiency silicon photodiode collecting most of the emitted light. The drive current is obtained from a resistor in series with a low-noise voltage supply. The Johnson noise in the current is much less than shot noise whenever the voltage across the resistor is large compared with 50 mV (2kT/e at room temperature). The LED converts electrons to photons directly with some efficiency η.