Experimental techniques for quantum simulation and computation using trapped ions

Wei Wu, Ting Zhang, Ping‐Xing Chen

Ch Schneider, Diego Porras, Tobias Schaetz

Direct experimental access to some of the most intriguing quantum phenomena is not granted due to the lack of precise control of the relevant parameters in their naturally intricate environment. Their simulation on conventional computers is impossible, since quantum behaviour arising with superposition states or entanglement is not efficiently translatable into the classical language. However, one could gain deeper insight into complex quantum dynamics by experimentally simulating the quantum behaviour of interest in another quantum system, where the relevant parameters and interactions can be controlled and robust effects detected sufficiently well. Systems of trapped ions provide unique control of both the internal (electronic) and external (motional) degrees of freedom. The mutual Coulomb interaction between the ions allows for large interaction strengths at comparatively large mutual ion distances enabling individual control and readout. Systems of trapped ions therefore exhibit a prominent system in several physical disciplines, for example, quantum information processing or metrology. Here, we will give an overview of different trapping techniques of ions as well as implementations for coherent manipulation of their quantum states and discuss the related theoretical basics. We then report on the experimental and theoretical progress in simulating quantum many-body physics with trapped ions and present current approaches for scaling up to more ions and more-dimensional systems.

Philip Richerme

The computational difficulty of solving fully quantum many-body spin problems is a significant obstacle to understanding the behavior of strongly correlated quantum matter. Experimental ion trap quantum simulation is a promising approach for studying these lattice spin models, but has so far been limited to one-dimensional systems. This work argues that such quantum simulation techniques are extendable to a two-dimensional (2D) ion crystal confined in a radio-frequency (rf) trap. Using appropriately chosen parameters, driven ion motion due to the rf fields can be made small and will not limit the types of quantum spin models that can be experimentally encoded. The rf-driven motion is calculated to modestly reduce the stability region of a 2D crystal and must be considered when designing the 2D trap. The system will be scalable to 100+ quantum particles, far beyond the realm of classical intractability, while maintaining the traditional ion trap strengths of individual-ion control, long quantum coherence times, and site-resolved projective spin measurements.

Stefano Olivares

Jürgen Eschner

Weikang Fan

This thesis describes the experimental work towards the development of a scalable quantum computer based on microfabricated ion trap using long-wavelength radiation and magnetic field gradient. There are three key elements in implementing such a quantum computer: the junction trap to shuttle ions, the structure to generate high gradient magnetic field and the structure to induce strong microwave coupling to the ions. A new dynamic simulation tool was developed addressing the problems faced by static solvers. This tool was used to aid the design and optimisation of an X junction geometry allowing the ions to be shuttled with minimised motional heating gain. The design and fabrication techniques were reported on the structure to generate a high gradient magnetic field. A discussion was given on the design of producing microwave and maximise the coupling to the cold ions. A review was given on the far-field methods and near-field methods. A novel design was reported where the single-qubit gate is predicted to be 45 times faster than a conventional setup. Two essential topics on the microfabrication of a reliable scalable quantum computer unit were discussed: breakdown and RF loss. Investigation using numerical simulations showed that dielectric can breakdown due to high voltage and local heating which are results of impedance mismatch. Microfabrication processes were improved, high-quality films were reported to have twice as much breakdown voltages. The mechanisms of RF loss were reviewed. Novel structures and smooth electroplating technique were developed to minimise the loss. A low loss ion trap was produced and tested. An experimentally observed anomalous glow discharge phenomenon was reported and investigated.