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9 GHz measurement of squeezed light by interfacing silicon photonics and integrated electronics/Main text

Joel F. Tasker, Jonathan Frazer, Giacomo Ferranti, F. Brunel

Published Sep 25, 2020• 0 citations
OpenAlex

Abstract

Photonic quantum technology can be enhanced by monolithic fabrication of both the underpinning quantum hardware and the corresponding electronics for classical readout and control. Together, this enables miniaturisation and mass-manufacture of small quantum devices---such as quantum communication nodes, quantum sensors and sources of randomness---and promises the precision and scale of fabrication required to assemble useful quantum computers. Here we combine CMOS compatible silicon and germanium-on-silicon nano-photonics with silicon-germanium integrated amplification electronics to improve performance of on-chip homodyne detection of quantum light. We observe a 3 dB bandwidth of 1.7 GHz, shot-noise limited performance beyond 9 GHz and minaturise the required footprint to 0.84 mm. We use the device to observe quantum squeezed light, from 100 MHz to 9 GHz, generated in a lithium niobate waveguide. This demonstrates that an all-integrated approach yields faster homodyne detectors for quantum technology than has been achieved to-date and opens the way to full-stack integration of photonic quantum devices.

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Photonic quantum technology can be enhanced by monolithic fabrication of both the underpinning quantum hardware and the corresponding electronics for classical readout and control. Together, this enables miniaturisation and mass-manufacture of small quantum devices---such as quantum communication nodes, quantum sensors and sources of randomness---and promises the precision and scale of fabrication required to assemble useful quantum computers. Here we combine CMOS compatible silicon and germanium-on-silicon nano-photonics with silicon-germanium integrated amplification electronics to improve performance of on-chip homodyne detection of quantum light. We observe a 3 dB bandwidth of 1.7 GHz, shot-noise limited performance beyond 9 GHz and minaturise the required footprint to 0.84 mm. We use the device to observe quantum squeezed light, from 100 MHz to 9 GHz, generated in a lithium niobate waveguide. This demonstrates that an all-integrated approach yields faster homodyne detectors for quantum technology than has been achieved to-date and opens the way to full-stack integration of photonic quantum devices.
Complimentary metal-oxide semiconductor (CMOS) integration of quantum technology provides a route to manufacture at volume, simplify assembly, reduce footprint, and increase performance. Quantum noise-limited homodyne detectors have applications across quantum technologies, and they comprise photonics and electronics. Here, we report a quantum noise-limited monolithic electronic-photonic integrated homodyne detector, with a footprint of 80 micrometers by 220 micrometers, fabricated in a 250-nanometer lithography bipolar CMOS process. We measure a 15.3-gigahertz 3-decibel bandwidth with a maximum shot noise clearance of 12 decibels and shot noise clearance out to 26.5 gigahertz, when measured with a 9-decibel-milliwatt power local oscillator. This performance is enabled by monolithic electronic-photonic integration, which goes below the capacitance limits of devices made up of separate integrated chips or discrete components. It exceeds the bandwidth of quantum detectors with macroscopic electronic interconnects, including wire and flip chip bonding. This demonstrates electronic-photonic integration enhancing quantum photonic device performance.
The ability to generate and detect quantum states of light on a single integrated photonic device is essential to scale quantum photonics into useful quantum technologies. Integrating the required capabilities into complementary-metal-oxide-semiconductor compatible monolithic chips can reduce cost and unlock new functionality through miniaturisation. In this work we demonstrate a single silicon-on-insulator photonic integrated circuit for the monolithic generation and detection of quantum light on a commercially available platform that operates entirely at room temperature. Specifically, we leverage spontaneous four-wave mixing in silicon waveguides to produce squeezed light which is subsequently detected by photodiodes operating in a pulsed homodyne detector configuration on the same chip as the source. We directly measure 0.25(1)0.25(1)0.25(1) dB of squeezing, including contributions from waveguide propagation loss and detection inefficiency, and include a detailed analysis of the impact of nonlinear loss on the squeezing levels achievable using this platform.
Integrated photonics is providing a compelling route for quantum limited and quantum enhanced technologies, including computing communications and optical sensing. This is because chip-scale integrated photonics can offer miniaturization as well as possible scalability in manufacture. Here we will discuss recent results in developing integrated homodyne detection integrated in silicon photonics. We discuss its combination with integrated electronics to demonstrate high bandwidth performance and its use to measure squeezed light over a broad bandwidth, out to 9GHz. This demonstrates a performance enhancement that is relevant to quantum technology and is due to miniaturization. We will discuss possible applications of of integrated quantum noise listed homodyne detection, including a strategy to perform quantum limited absorption estimation using integrated photonics and coherent states.
Silicon photonics is rapidly evolving as an advanced chip framework for implementing quantum technologies. With the help of silicon photonics, general-purpose programmable networks with hundreds of discrete components have been developed. These networks can compute quantum states generated on-chip as well as more extraordinary functions like quantum transmission and random number generation. In particular, the interfacing of silicon photonics with complementary metal oxide semiconductor (CMOS) microelectronics enables us to build miniaturized quantum devices for next-generation sensing, communication, and generating randomness for assembling quantum computers. In this review, we assess the significance of silicon photonics and its interfacing with microelectronics for achieving the technology milestones in the next generation of quantum computers and quantum communication. To this end, especially, we have provided an overview of the mechanism of a homodyne detector and the latest state-of-the-art of measuring squeezed light along with its integration on a photonic chip. Finally, we present an outlook on future studies that are considered beneficial for the wide implementation of silicon photonics for distinct data-driven applications with maximum throughput.
Squeezed light are optical beams with variance below the Shot Noise Level. They are a key resource for quantum technologies based on photons, they can be used to achieve better precision measurements, improve security in quantum key distribution channels and as a fundamental resource for quantum computation. To date, the majority of experiments based on squeezed light have been based on non-linear crystals and discrete optical components, as the integration of quadrature squeezed states of light in a nanofabrication-friendly material is a challenging technological task. Here we measure 0.45 dB of GHz-broad quadrature squeezing produced by a ring resonator integrated on a Silicon Nitride photonic chip that we fabricated with CMOS compatible steps. The result corrected for the off-chip losses is estimated to be 1 dB below the Shot Noise Level. We identify and verify that the current results are limited by excess noise produced in the chip, and propose ways to reduce it. Calculations suggest that an improvement in the optical properties of the chip achievable with existing technology can develop scalable quantum technologies based on light.