The inner structure of the Josephson absorption effect IV characteristic in the vicinity of the inflexion points is analysed for stationary finite bandwidth irradiation. The zero crossings and the slopes of the higher-order derivatives of the IV characteristic offer further possibilities for more precise Josephon voltage determination. The results of the analysis indicate that the properties of the inner structure of the IV characteristic affect applications such as frequency multiplication and frequency mixing.The inner structure of the Josephson absorption effect IV characteristic in the vicinity of the inflexion points is analysed for stationary finite bandwidth irradiation. The zero crossings and the slopes of the higher-order derivatives of the IV characteristic offer further possibilities for more precise Josephon voltage determination. The results of the analysis indicate that the properties of the inner structure of the IV characteristic affect applications such as frequency multiplication and frequency mixing.

International Journal of ElectronicsMar 1, 19770 citations

Theoretical investigations on series connections of Josephson junctions

B. Mikolajczak, H.‐G. Meyer, P. Seidel +2 more

Physica B+CMay 1, 19871 citation

An ultra-small capacitance Josephson junction

Efrat Shimshoni, Yuval Gefen, Shimon Levit

Jan 1, 19890 citations

Lumped 50- $\Omega$ Arrays of SNS Josephson Junctions

N. Hadacek, Paul D. Dresselhaus, Samuel P. Benz

For the first time, lumped series arrays of Josephson junctions have been fabricated with a transmission line-matched 50-Omega resistance. These arrays also have the thousands of junctions necessary to produce a metrologically significant voltage. This approach is expected to increase the output voltage per array and to optimize their performance for Josephson voltage standards. Traditional Josephson arrays for voltage standards have used distributed microwave structures, where array lengths are several multiples of the driving wavelength. The lumped arrays in this work have physical lengths shorter than a quarter of the microwave drive wavelength and total normal-state resistances nearly equal to the transmission line impedance. Fabrication of these arrays was made possible by use of a newly developed Nb-(MoSi2-Nb)nstacked junction technology. We present measurements of the microwave response of lumped arrays with total normal resistances up to 54 Omega and with various termination resistances. A simple numerical model is presented that accounts for the spatial distribution of the microwave current and for the nonuniformity of the junction critical currents. The resulting simulations agree well with experimental resultsFor the first time, lumped series arrays of Josephson junctions have been fabricated with a transmission line-matched 50-Omega resistance. These arrays also have the thousands of junctions necessary to produce a metrologically significant voltage. This approach is expected to increase the output voltage per array and to optimize their performance for Josephson voltage standards. Traditional Josephson arrays for voltage standards have used distributed microwave structures, where array lengths are several multiples of the driving wavelength. The lumped arrays in this work have physical lengths shorter than a quarter of the microwave drive wavelength and total normal-state resistances nearly equal to the transmission line impedance. Fabrication of these arrays was made possible by use of a newly developed Nb-(MoSi2-Nb)nstacked junction technology. We present measurements of the microwave response of lumped arrays with total normal resistances up to 54 Omega and with various termination resistances. A simple numerical model is presented that accounts for the spatial distribution of the microwave current and for the nonuniformity of the junction critical currents. The resulting simulations agree well with experimental results

IEEE Transactions on Applied SuperconductivityDec 1, 20066 citations

High Frequency Properties of Josephson Junctions

Thilo Bauch, Edoardo Trabaldo, Floriana Lombardi

Springer series in materials scienceJan 1, 20191 citation

Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction

Shujie Yu, Lei Chen, Yinping Pan +10 more

Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage ( V g ). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing V g . The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using V g in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage ( V g ). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing V g . The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using V g in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.

arXiv:2308.00953Nano LettersAug 17, 202313 citations