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電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス

単結晶 NbN を用いたサブミリ波帯SIS電磁波受信機の開発

彰 川上, 佳憲 鵜澤, 正典 武田

Published Apr 23, 2003• 0 citations
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We report on the mixing properties of waveguide SIS mixers with epitaxial NbN/AlN/NbN junctions and NbN/SiO2/NbTiN microstrips on MgO substrates. The superconducting transition temperature and 20-K resistivity of NbTiN film on the SiO2dielectric were 14.7 K and 175 muOmega cm, respectively. The junction tuning circuit was composed of an NbN/SiO2/NbTiN microstrip and two parallel-connected NbN/AlN/NbN junctions 0.9 mum in diameter. The critical current density and normal-state resistance of the fabricated NbN junction were 13 kA/cm2and 22 Omega, respectively. The heterodyne response was measured using 295- and 77-K blackbody sources, a local oscillator (LO) source, and a 25-mum-thick Kapton film as a beam splitter. An intermediate frequency (IF) amplifier with a bandwidth of 4-12 GHz was used in the measurements. The receiver noise temperature corrected for losses in the beam splitter and in the vacuum window of the cryocooler was 370 K at 860 GHz and was comparable to that of all-NbN mixes with NbN/MgO/NbN microstrips.

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Akira Kawakami, Zhen Wang, Shigehito Miki

To improve the performance of Josephson oscillators and SIS mixers over 700 GHz, we have developed a fabrication process to grow epitaxial NbN/MgO/NbN trilayers by reactive dc-sputtering. Trilayers were fabricated on a single-crystal MgO substrate at ambient temperature. NbN and MgO films were deposited by reactive dc-sputtering with an Nb and Mg target, respectively. The MgO inter-layer thickness was changed up to 480 nm, but, T/sub C/ and 20-K resistivity of the NbN upper-layer showed no remarkable dependency and they were 15.7 K and about 60 /spl mu//spl Omega/cm, respectively. To evaluate the RF performance of the epitaxial NbN films, we fabricated Josephson junctions with a microstrip resonator constructed from an epitaxial NbN/MgO/NbN trilayer. The I-V characteristics of the junction exhibited resonance steps up to 2.5 mV, which suggests that the epitaxial NbN films have low loss up to 1.2 THz.

IEEE Transactions on Applied Superconductivity•Mar 1, 2001•30 citations

NbN膜,Nb膜を電極に用いた単一磁束量子メモリセルの集積 (ジョセフソンコンピュ-タ技術特集)

彰 東海林, 紳 幸坂, Fujitoshi Shinoki

電子技術総合研究所彙報•Apr 1, 1984•0 citations
We report on the mixing properties of waveguide SIS mixers with epitaxial NbN/AlN/NbN junctions and NbN/SiO2/NbTiN microstrips on MgO substrates. The superconducting transition temperature and 20-K resistivity of NbTiN film on the SiO2dielectric were 14.7 K and 175 muOmega cm, respectively. The junction tuning circuit was composed of an NbN/SiO2/NbTiN microstrip and two parallel-connected NbN/AlN/NbN junctions 0.9 mum in diameter. The critical current density and normal-state resistance of the fabricated NbN junction were 13 kA/cm2and 22 Omega, respectively. The heterodyne response was measured using 295- and 77-K blackbody sources, a local oscillator (LO) source, and a 25-mum-thick Kapton film as a beam splitter. An intermediate frequency (IF) amplifier with a bandwidth of 4-12 GHz was used in the measurements. The receiver noise temperature corrected for losses in the beam splitter and in the vacuum window of the cryocooler was 370 K at 860 GHz and was comparable to that of all-NbN mixes with NbN/MgO/NbN microstrips.
To improve the performance of Josephson oscillators and SIS mixers over 700 GHz, we have developed a fabrication process to grow epitaxial NbN/MgO/NbN trilayers by reactive dc-sputtering. Trilayers were fabricated on a single-crystal MgO substrate at ambient temperature. NbN and MgO films were deposited by reactive dc-sputtering with an Nb and Mg target, respectively. The MgO inter-layer thickness was changed up to 480 nm, but, T/sub C/ and 20-K resistivity of the NbN upper-layer showed no remarkable dependency and they were 15.7 K and about 60 /spl mu//spl Omega/cm, respectively. To evaluate the RF performance of the epitaxial NbN films, we fabricated Josephson junctions with a microstrip resonator constructed from an epitaxial NbN/MgO/NbN trilayer. The I-V characteristics of the junction exhibited resonance steps up to 2.5 mV, which suggests that the epitaxial NbN films have low loss up to 1.2 THz.