Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology.Here, we investigate double-quantum-dot (DQD) charge qubits in GaAs capacitively coupled to highimpedance superconducting quantum interference device array and Josephson-junction array resonators.We tune the strength of the electric-dipole interaction between the qubit and the resonator in situ using surface gates.We characterize the qubit-resonator coupling strength, the qubit decoherence, and the detuning noise affecting the charge qubit for different electrostatic DQD configurations.We find all quantities to be systematically tunable over more than one order of magnitude, resulting in reproducible decoherence rates Γ 2 =2π < 5 MHz in the limit of high interdot capacitance.In the opposite limit, by reducing the interdot capacitance, we increase the DQD electric-dipole strength and, therefore, its coupling to the resonator.Employing a Josephson-junction array resonator with an impedance of approximately 4 kΩ and a resonance frequency of ω r =2π ∼ 5.6 GHz, we observe a coupling strength of g=2π ∼ 630 MHz, demonstrating the possibility to operate electrons hosted in a semiconductor DQD in the ultrastrong-coupling regime (USC).The presented results are essential for further increasing the coherence of quantum-dot-based qubits and investigating USC physics in semiconducting QDs.
High Resolution Image Download MS PowerPoint Slide We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform that can host long-lived spin and valley states. Our device combines a high-impedance ( Z r ≈ 1 kΩ) superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waals heterostructure. Electric dipole coupling between the subsystems allows the resonator to sense the electric susceptibility of the double quantum dot from which we reconstruct its charge stability diagram. We achieve sensitive and fast detection of the interdot transition with a signal-to-noise ratio of 3.5 within 1 μs integration time. The charge–photon interaction is quantified in the dispersive and resonant regimes by comparing the resonator response to input–output theory, yielding a coupling strength of g /2π = 49.7 MHz. Our results introduce cQED as a probe for quantum dots in van der Waals materials and indicate a path toward coherent charge–photon coupling with bilayer graphene quantum dots.
We study a vertical double quantum dot (DQD) in a Si/Si
1−xGe
x/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to the emerging spin-orbit interaction in the DQD, as well as strain from the gate electrodes, small (percentage range) but finite
g tensor variations emerge. In addition, we find a large valley splitting, on the order of
Ev∼250μeV. As a result, multiple avenues for fast electrical single qubit rotations emerge. An ac electric field gives rise to electric dipole spin resonance (EDSR), while electron spin resonance (ESR) in the presence of an ac magnetic field can be electrically controlled by local gates due to varying
g factors in DQDs. We also show that shuttling between neighboring dots, in vertical and horizontal direction, results in ultrafast single qubit gates of less than a nanosecond. Remarkably, this DQD architecture completely eliminates the need for micromagnets, significantly facilitating the scalability of LD spin qubits in semiconductor foundries.