Some results of probing to the common properties, including bistability, transient behavior, and instability of the excitonic optical nonlinear dynamic systems, such as interaction of light field with carrier in semiconductor, or anharmonic vibration of lattice in ionic crystal, are presented. Since the excitonic optical bistability (EOB) was found, it has garnered much attention for its advantage in properties and application prospects. Some models have been proposed for different kinds of OB. However, so far as we know, there has been relatively less concern given to the common dynamic characteristics of these systems, which are significant for applications. On the other hand, the instability of the EOB device certainly has the same importance, the study for which is not ample yet. In this paper we study the increasing absorptive OB, the behaviors of responding to inject signal, also the self-pulsing and chaotic phenomena in the excitonic OB systems.
We measured the optical transitions due to the internal energy levels of an exciton and biexciton in a CuCl single crystal using pump-probe spectroscopy. The transient absorption bands due to the transitions from the
1s to
2p and from the
1s to
3p exciton states were observed at 3 K, which is consistent with their reported energies. Simultaneously, the transient absorption peak due to the biexciton was observed, which corresponds to a transition from the lowest state (composed of two
1s excitons) to higher states (composed of
1s and
2p excitons). The value of the observed biexciton peak energy was reasonable considering the hydrogen molecule orbitals and the electron-to-hole effective mass ratio. In addition, the transient absorption peaks were broadened at 77 K, because of the increase in the homogeneous width of the
2p exciton state. The transient absorption spectrum was almost completely determined by this width. Our findings are of importance with regard to the optical phenomena in the infrared region related to the quantum coherence of excitons and biexcitons in semiconductors.