Characterization of individual charge fluctuators in Si/SiGe quantum dots
Feiyang Ye, Ammar A. Ellaboudy, Dylan Albrecht +3 more
Quantum computers are susceptible to noise. In silicon quantum computers, random electrical fluctuations in the semiconductor can disturb qubits based on individual electrons. However, little is known about the causes of these electrical fluctuations. Here, the authors zoom in and study individual charge fluctuators in silicon quantum dots and observe a variety of new phenomena. The results promise to help understand and mitigate charge noise in silicon quantum computers.
arXiv:2401.14541•Physical review. B./Physical review. B•Dec 11, 2024•18 citations