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APS

Interaction effects in coupled quantum dots.

F. Ramirez, E. Cota, Sergio E. Ulloa

Published Mar 1, 1996• 0 citations
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We consider a system of three weakly coupled Bose-Einstein condensates and two atomic quantum dots embedded in the barriers between the condensates. Each dot is coupled to two neighboring condensates by optical transitions and can be described as a two-state system, or a pseudospin 1/2. Although there is no direct coupling between the dots, an effective interaction between the pseudospins is induced due to their coupling to the condensate reservoirs. We investigate this effective interaction, depending on the strengths of the dot-condensate coupling T and the direct coupling J between the condensates. In particular, we show that an initially ferromagnetic arrangement of the two pseudospins stays intact even for large T / J . However, antiferromagnetically aligned spins undergo peculiar “breathing” modes for weak coupling T / J <1, while for strong coupling the behaviour of the spins becomes uncorrelated.
We generalize the bosonization methods for systems in the half line that we discussed elsewhere, to study the effects of interactions on electronic systems coupled to impurities. We introduce a model for a quantum wire coupled with a quantum dot by a purely capacitive interaction. We show that the effect on the quantum wire is a dynamical boundary condition which reflects the charge fluctuations of the quantum dot. Special attention is given to the role of the fermion boundary conditions and their interplay with the electron interactions on the bosonized effective theory.
Scalable architectures for quantum computing using semiconductor quantum dots require interactions between qubits beyond adjacent quantum dots. Here, we propose using nanowires of electrons to mediate the interaction between two quantum dots. Virtual phonons in the linear chain of electrons can mediate an interaction that gives rise to effective spin-spin coupling of the electrons in distant quantum dots. We find coupling strengths of more than 30 MHz for experimentally realisable parameters in GaAs quantum dots.