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The Japan Society of Applied Physics

Detection of Single Flux Quantum in Superconducting Nano Strip Lines using SFQ circuits

Yutaka ABE, Yuma Tomitsuka, Nobuyuki Zen, Go Fujii, Yasunori Mawatari, Yuki Yamanashi, Nobuyuki Yoshikawa

Published Jul 21, 2017• 0 citations
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We have developed a very flexible wiring technique of passive transmission lines (PTLs) in single-flux-quantum (SFQ) circuits. For high flexibility, we introduced two types of wiring structures of strip lines (SLs) and microstrip lines (MSLs) using the fabrication process which has four metal layers. The SLs and MSLs are realized using the second and fourth metal layers as signal lines, respectively, from the bottom (the other two metal layers are used as ground planes). We also introduced via-holes for transmission between the SL and MSL. For solving the problem of impedance mismatch on complicated discontinuous sections such as joints [between the driver(receiver) and the end of SLs(MSLs)] and via-holes, we optimized the structures of these discontinuous sections and evaluated propagation properties to ensure high-speed transmission of SFQ pulses. We tested the transmission of SFQ pulses through SLs/MSLs including more than 50 via-holes, one of the most complicated lines in actual designs. We confirmed the good propagation properties of SFQ pulses up to 50 Gb/s with sufficiently wide bias margins of ±20% to be used in practical designs.
In recent years, rapid single flux quantum (RSFQ) circuits, which are promising for the development of high-speed digital electronics, have attracted widespread interest. Niobium nitride (NbN) films have also attracted significant attention for high-frequency applications in superconducting electronics because of their superior material parameters, including their high critical temperature Tc and large gap voltage Vg. To enable the development of all-NbN SFQ circuits, we have developed a fabrication process based on NbN junctions and inductors made of NbN strip lines. It is important to evaluate the inductance because it can affect the performance of an RSFQ circuit and is essential for the RSFQ design. We measured the inductance properties of both epitaxial and polycrystalline NbN strip lines using a superconducting quantum interference device modulation technique at 4.2 K and obtained the width dependence on the inductance of the NbN films. The penetration depth was then calculated from these measurements. The NbN inductance values were calculated numerically with respect to the penetration depth and were then compared with the measured values from the experiments. It was demonstrated that the differences between these values were within 5%. The results reported here will be useful for the design and fabrication of all-NbN RSFQ circuits.