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Bulletin of the American Physical Society

Dynamics of Silicon-Vacancy Color Center in Nanodiamonds

Chunjing Jia, Yan‐Kai Tzeng, Yu‐Chuan Lin, Thomas Devereaux, Steven Chu

Published Mar 2, 2020• 0 citations
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The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.
We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approximately 160 nm in lateral size with a thickness of approximately 75 nm. These oriented ``nanoislands'' combine the enhanced fluorescence extraction from subwavelength-sized nanodiamonds with defined crystal orientation. The investigated SiV centers display narrow zero-phonon lines down to 0.7 nm in the wavelength range 730--750 nm. We investigate in detail the phonon coupling and vibronic sidebands of single SiV centers, revealing significant inhomogeneous effects. Polarization measurements reveal polarized luminescence and preferential absorption of linearly polarized light.