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Photonics technologies: Trapping and cooling of ions for quantum information processing

Kazuhiro Hayasaka, Satoshi Uetake, Hidetsuka Imajo, 早坂 和広, 智 植竹, 秀司 今城

Published Feb 21, 2005• 0 citations
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We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled 9 Be + ion held at a distance of 35 above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled 9Be+ ion held at a distance of 35 above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.