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OptSp

Extrapolation scheme for estimating the lifetime of Rydberg states of atoms and ions in the single-electron approximation

Nikolai N. Bezuglov, Evgenii N. Borisov, Ya. F. Verolainen

Published Jun 1, 1988• 0 citations
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The empirical regularities in the variation of the radiative lifetimes τ k of excited states of atoms are reviewed. A quasiclassical theory of radiation damping processes is constructed. The formalism of quantization of the natural width A k = τ k −1 of the excited states of atoms and ions is presented. The question of how to describe the serial dependences for a perturbed series is investigated. It is demonstrated that the radiation emission of atomic systems is sharply reduced when the classical factors in the radiative processes are suppressed. Schemes are proposed for extrapolating lifetimes from the lower terms of a series to the upper Rydberg states, right up to the continuum. Recommended values of τ k for group I, II, and VIII atoms are given in a form that is convenient for inclusion in a computerized data base.

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Trapped ions excited to high-lying electronic states, so-called Rydberg states, open new opportunities for quantum simulation and quantum computing. Generally, the fidelity of quantum coherent operations critically depends on the longevity of Rydberg states. However, scaling laws predict that the lifetimes of Rydberg states in singly charged alkaline-earth metal ions are 16 times shorter, compared to their neutral atom counterparts. Here, we show that this is not generally the case. We report an anomalous lifetime enhancement of certain low angular momentum ionic Rydberg series by factors larger than eight. The anomaly is present at both zero and finite temperature, although it is caused by different mechanisms. At zero temperature, the anomalously enhanced lifetimes are caused by accidental cancellations of the relevant dipole transition matrix elements, while at room temperature the anomaly originates from the enlarged energetic separation of ionic Rydberg levels with respect to neutral-atom levels.

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Silicon as a model ion trap: Time domain measurements of donor Rydberg states

N. Q. Vinh, P. Thornton Greenland, K. L. Litvinenko +9 more

One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

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Approximate calculation of the radiative lifetimes of excited states of atoms and ions

Pavel Bogdanovich, G. L. Zhukauskas, Alina Momkauskaitė

OptSp•Apr 1, 1988•0 citations
The empirical regularities in the variation of the radiative lifetimes τ k of excited states of atoms are reviewed. A quasiclassical theory of radiation damping processes is constructed. The formalism of quantization of the natural width A k = τ k −1 of the excited states of atoms and ions is presented. The question of how to describe the serial dependences for a perturbed series is investigated. It is demonstrated that the radiation emission of atomic systems is sharply reduced when the classical factors in the radiative processes are suppressed. Schemes are proposed for extrapolating lifetimes from the lower terms of a series to the upper Rydberg states, right up to the continuum. Recommended values of τ k for group I, II, and VIII atoms are given in a form that is convenient for inclusion in a computerized data base.
Trapped ions excited to high-lying electronic states, so-called Rydberg states, open new opportunities for quantum simulation and quantum computing. Generally, the fidelity of quantum coherent operations critically depends on the longevity of Rydberg states. However, scaling laws predict that the lifetimes of Rydberg states in singly charged alkaline-earth metal ions are 16 times shorter, compared to their neutral atom counterparts. Here, we show that this is not generally the case. We report an anomalous lifetime enhancement of certain low angular momentum ionic Rydberg series by factors larger than eight. The anomaly is present at both zero and finite temperature, although it is caused by different mechanisms. At zero temperature, the anomalously enhanced lifetimes are caused by accidental cancellations of the relevant dipole transition matrix elements, while at room temperature the anomaly originates from the enlarged energetic separation of ionic Rydberg levels with respect to neutral-atom levels.
One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.