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APS

Optical bistability in far-infrared driven quantum-well intersubband transitions

Adriano A. Batista, David S. Citrin

Published Mar 1, 2003• 0 citations
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We have derived Maxwell-Bloch equations of a two-subband model suitable for studying intersubband-transition induced optical-nonlinearities of semiconductor superlattices (SLs). Analytical expressions and numerical illustrations for absorptive and dispersive optical bistabilities (OBs) of SL etalons are given. Both OBs can be realized in infrared region with high frequency selectivity, and their bistable domains and hysteresis loops are much larger than those of a two-level system. The dispersive OB is preferable due to its lower value of the input power.

Journal of Nonlinear Optical Physics & Materials•Mar 1, 1997•0 citations
An intrinsic optical bistability in a double quantum well is described theoretically. The effect is based on the resonant tunneling of electrons against the electric-field force (the counterfield electron transfer) and is driven and controlled by far-ir radiation exciting an intersubband transition. The theory relies on the density-matrix technique and takes into account optical intersubband excitation, interwell tunneling, the relaxation of populations and polarizations, and the mean-field effects of the transferred electron charge (shifts of the levels and changes of matrix elements). Hysteresis-type curves are obtained for both the charge-transfer probability and the optical absorption as functions of the light intensity. The theory shows the effect to be readily observable under realistic conditions, with the exciting-light intensity as low as 50 W/cm2{\mathrm{cm}}^{2}cm2.
We have derived Maxwell-Bloch equations of a two-subband model suitable for studying intersubband-transition induced optical-nonlinearities of semiconductor superlattices (SLs). Analytical expressions and numerical illustrations for absorptive and dispersive optical bistabilities (OBs) of SL etalons are given. Both OBs can be realized in infrared region with high frequency selectivity, and their bistable domains and hysteresis loops are much larger than those of a two-level system. The dispersive OB is preferable due to its lower value of the input power.