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Trapped ion qubit readout using a trap-integrated superconducting nanowire single photon detector

Susanna Todaro, Varun Boehm Verma, Richard P. Mirin, Sae Woo Nam, D. J. Wineland, A. C. Wilson, Dietrich G. Leibfried, D. H. Slichter

Published May 1, 2019• 0 citations
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Atomic ions can be trapped in vacuum with dc and rf electric potentials generated by surface electrode ion traps, and used as qubits in quantum computing applications. Qubit state preparation and control is usually accomplished with laser light while the qubit state readout is achieved by observing qubit-state-dependent fluorescence from the ion while driving an optical cycling transition. The monolithic integration of optical waveguides and single-photon detectors into the ion trap itself provides both light delivery and fluorescence photon counting capability, offering benefits for scaling in trapped ion quantum computing by eliminating the need for free-space optical access to the trap. One promising candidate for integrated high-fidelity trapped-ion qubit state readout are superconducting nanowire single-photon detectors (SNSPDs). However, the joint integration of photonics and superconducting detectors into ion trap chips presents challenges for their design, fabrication, and operation. In this work, we present our progress on the integration of SNSPDs into linear ion traps with integrated photonics designed for Ca+ qubits.
State readout of trapped-ion qubits is usually achieved by observing qubit-state-dependent fluorescence from the ion while driving an optical cycling transition with laser light. The integration of photon detectors for fluorescence detection into the ion trap itself may benefit the development of many-qubit setups for applications like quantum computing. Superconducting nanowire single-photon detectors (SNSPDs) are promising candidates for trap-integrated detectors for high-fidelity trapped-ion qubit state readout. However, the strong oscillating electromagnetic fields that are typically used to trap and manipulate ions can affect the function of the SNSPDs significantly. In this work, we demonstrate an improved design to integrate SNSPDs into linear rf ion traps that reduces the susceptibility of the SNSPDs to applied rf trapping potentials. Our measurement results represent an improvement in rf tolerance by an order of magnitude with an increase in operation temperature from 3.5K to 6K compared to previous work.