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Optically Bistable Multiple Quantum Well Phase Modulator Controlled by Self Electro-Optic Device.

Chongdae Park

Published Jan 1, 1992• 0 citations
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The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 mu m, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 mu m light propagating through a waveguide in a direction normal to the control beam.>

IEEE Photonics Technology Letters•Nov 1, 1992•3 citations
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.
The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 mu m, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 mu m light propagating through a waveguide in a direction normal to the control beam.>