Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Optical Bistability in Semiconducting Material.

Yiqiang Li

Published Jan 1, 1989• 0 citations
OpenAlex

Related papers

High Speed Phenomena in Photonic Materials and Optical Bistability

Dieter Jaeger

•Aug 1, 1990•5 citations

Optical Bistability in CdS and Related Materials

Claus F. Klingshirn, M. Wegener, Claus Dörnfeld +3 more

Springer proceedings in physics•Jan 1, 1986•5 citations

Optical bistability from a thermodynamic phase transition in vanadium dioxide

R. S. Rana, F. A. Chudnovskiǐ, David D. Nolte

We demonstrate cw optical bistability at 1.06 μm using the large thermo-optical nonlinearity from the metal-semiconductor phase transition in a thin-film interference filter of vanadium dioxide. Highly stable and reproducible operation has been obtained. By biasing at the transition point, an all-optical external switching between the semiconducting and the metallic states has been demonstrated, with a contrast ratio of 15:1. The effective nonlinear index coefficient is n2 ≈ 1.6 cm2/W with a switching energy density of 135 pJ/μm2 and a speed of 15 ms. The tunability of the material properties of vanadium dioxide provides a means to make devices with a wide range of switching powers and speeds.

Optics Letters•Oct 1, 1992•21 citations

Optical Bistability in Semiconductors

Stanley Desmond Smith

Springer series in optical sciences/SPringer series in optical sciences•Jan 1, 1981•1 citation

Optical bistability in semiconductors

В. С. Днепровский

Soviet Physics Uspekhi•Jan 31, 1985•1 citation

Intrinsic optical bistability between left-handed material and nonlinear optical materials

Hongyan Shi, Yongyuan Jiang, Sun Xiu-Dong +2 more

The electromagnetic properties of the interface between a left-handed material and a conventional nonlinear material were investigated theoretically and numerically. We found a new phenomenon—optical bistability of the interface. It was shown that the incident intensity, incident angle and permeability ratio between the left-handed and the nonlinear materials could dramatically affect the optical bistable behaviour. We also compared the bistable behaviours of different electromagnetic modes. The results indicated that the TE mode was prior to the TM mode to obtain optical bistability for the same parameter.

Chinese Physics•Jul 29, 2005•10 citations
We demonstrate cw optical bistability at 1.06 μm using the large thermo-optical nonlinearity from the metal-semiconductor phase transition in a thin-film interference filter of vanadium dioxide. Highly stable and reproducible operation has been obtained. By biasing at the transition point, an all-optical external switching between the semiconducting and the metallic states has been demonstrated, with a contrast ratio of 15:1. The effective nonlinear index coefficient is n2 ≈ 1.6 cm2/W with a switching energy density of 135 pJ/μm2 and a speed of 15 ms. The tunability of the material properties of vanadium dioxide provides a means to make devices with a wide range of switching powers and speeds.
The electromagnetic properties of the interface between a left-handed material and a conventional nonlinear material were investigated theoretically and numerically. We found a new phenomenon—optical bistability of the interface. It was shown that the incident intensity, incident angle and permeability ratio between the left-handed and the nonlinear materials could dramatically affect the optical bistable behaviour. We also compared the bistable behaviours of different electromagnetic modes. The results indicated that the TE mode was prior to the TM mode to obtain optical bistability for the same parameter.