Proposed Universal Deutsch Gate Circuitry Using GaAs/InAs Quantum Dots

Paul Bailey, Jean-François S. Van Huele

Duncan G. Steel

R. Ferreira

S. Sauvage, P. Boucaud, T. Brunhes +9 more

Colin Ming Earn Chow, Zhexuan Gong, Luming Duan +1 more

We propose a universal two-qubit gate by inducing Raman transitions between singlet-triplet states in doubly-charged quantum dot molecules using intensity-modulated CW laser. By numerical optimization, a gate-fidelity above 99.99% can be achieved.

Rohan Radhakrishnan, Rodion Reznik, Gilles Patriarche +5 more

Optical quantum dots (QDs) are central to photonic quantum technologies, with fabrication approaches tailored to different spectral ranges. A key challenge, however, is the realization of a unified platform$\unicode{x2014}$a single growth method combined with a host material offering a designable architecture$\unicode{x2014}$enabling wavelength tunability across the full emission range and co-integration of multiple quantum dots. Here, we introduce AlGaAs nanowires as a universal host for GaAs, InGaAs, and InAs QDs. Building on our previous demonstration of high-quality GaAs QDs, we realize InGaAs QDs with tunable emission by varying the growth duration from 2 to 5 s, achieving emission at 780 and 920 nm. We further showcase the platform's versatility for multi-quantum-dot devices by co-integrating two InGaAs QDs, as well as GaAs and InGaAs QDs within a single nanowire. Finally, we initiate a first step toward pure InAs QDs by growing a pristine InAs segment on AlGaAs nanowires, demonstrating material compatibility.