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Bulletin of the American Physical Society

Materials Engineering in Superconducting Qubits

Alexander P. M. Place, Basil M. Smitham, Lila V. H. Rodgers, Pranav Mundada, Mattias Fitzpatrick, Sara Sussman, Anjali Premkumar, Jacob Bryon, Berthold Jäck, Guangming Cheng, Harshvardhan K. Babla, Trisha Madhavan, Austin M. Ferrenti, András Gyenis, R. J. Cava, Nan Yao, Nathalie P. de Leon, Andrew Houck

Published Mar 3, 2020• 0 citations
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Quantum computing based on superconducting qubits requires the understanding and control of the materials, device architecture, and operation. However, the materials for the central circuit element, the Josephson junction, have mostly been focused on using the AlO x tunnel barrier. Here, we demonstrate Josephson junctions and superconducting qubits employing two-dimensional materials as the tunnel barrier. We batch-fabricate and design the critical Josephson current of these devices via layer-by-layer stacking N layers of MoS 2 on the large scale. Based on such junctions, MoS 2 transmon qubits are engineered and characterized in a bulk superconducting microwave resonator for the first time. Our work allows Josephson junctions to access the diverse material properties of two-dimensional materials that include a wide range of electrical and magnetic properties, which can be used to study the effects of different material properties in superconducting qubits and to engineer novel quantum circuit elements in the future.
Utilizing tantalum (Ta) in superconducting circuits has led to significant improvements, such as high qubit lifetimes and quality factors in both qubits and resonators, underscoring the importance of material optimization in quantum device performance. In this work, we explore superconducting gap engineering in Ta-based devices as a strategy to expand the range of viable host materials. By alloying 20 atomic percent hafnium (Hf) into Ta thin films, we achieve a superconducting transition temperature (TcT_cTc​) of 6.09~K, as measured by DC transport, reflecting an increased superconducting gap. We systematically vary deposition conditions to control film orientation and transport properties of the Ta-Hf alloy films. The enhancement in TcT_cTc​ is further confirmed by microwave measurements at millikelvin temperatures. Despite the 40\% increase in TcT_cTc​ relative to pure Ta, the loss contributions from two-level systems (TLS) and quasiparticles (QPs) remain unchanged in the low-temperature regime. These findings highlight the potential of material engineering to improve superconducting circuit performance and motivate further exploration of engineered alloys for quantum technologies.