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Softwaretechnik-Trends

Superconductive NbN Hot-Electron Bolometric Mixer Performance at 250 GHz

Jonathan H. Kawamura, R. Blundell, Edward Tong, Gregory N Gol'tsman, Eugene M. Gershenzon, B. Voronov

Published Mar 1, 1996• 2 citations
OpenAlex

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Hot Electron Bolometric mixers based on NbN films deposited on MgO substrates

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Softwaretechnik-Trends•Mar 1, 1998•0 citations

Performance of a quasi-optical NbN hot-electron bolometric mixer at terahertz frequencies

Yoshinori Uzawa, Shigehito Miki, Z Wang +4 more

The performance of a hot-electron bolometric (HEB) mixer based on NbN from 0.9 to 2.5 THz was investigated using a quasi-optical receiver configuration. An HEB mixer is an ultra-thin superconducting NbN strip located at the feed point of a thick normal conducting Au spiral antenna on a high-resistivity Si substrate. The active area of the mixer was 3 nm thick, 0.4 μm long and 4 μm wide. The quasi-optics consisted of an MgO hyperhemisphere with anti-reflection caps made of Kapton-JP polyimide film and an offset parabola to reduce input losses. The frequency dependence of the double-sideband receiver noise temperature was investigated at several frequencies by using a backward wave oscillator or an optically pumped far-infrared laser as the local oscillator. Results demonstrated low-noise and wide-band characteristics, below 1 K GHz −1 over the measured frequency range. At 917 GHz, the measured receiver noise temperature was 550 K across a 500 MHz intermediate-frequency bandwidth centred at 1.5 GHz, which is slightly better than that of other HEB mixers at around this frequency. This paper was presented at the 8th International Superconductive Electronics Conference, Osaka, Japan, 19–22 June 2001.

Superconductor Science and Technology•Dec 19, 2001•5 citations

Quasioptical Phonon-Cooled NbN Hot-Electron Bolometer Mixers at 0.5-1.1 THz

S. Svechnikov, Alexander A. Verevkin, B. Voronov +3 more

The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness —3.5 nm) NbN 1.5 p.m wide and 0.2 pm long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.

Softwaretechnik-Trends•Mar 1, 1998•1 citation
The performance of a hot-electron bolometric (HEB) mixer based on NbN from 0.9 to 2.5 THz was investigated using a quasi-optical receiver configuration. An HEB mixer is an ultra-thin superconducting NbN strip located at the feed point of a thick normal conducting Au spiral antenna on a high-resistivity Si substrate. The active area of the mixer was 3 nm thick, 0.4 μm long and 4 μm wide. The quasi-optics consisted of an MgO hyperhemisphere with anti-reflection caps made of Kapton-JP polyimide film and an offset parabola to reduce input losses. The frequency dependence of the double-sideband receiver noise temperature was investigated at several frequencies by using a backward wave oscillator or an optically pumped far-infrared laser as the local oscillator. Results demonstrated low-noise and wide-band characteristics, below 1 K GHz −1 over the measured frequency range. At 917 GHz, the measured receiver noise temperature was 550 K across a 500 MHz intermediate-frequency bandwidth centred at 1.5 GHz, which is slightly better than that of other HEB mixers at around this frequency. This paper was presented at the 8th International Superconductive Electronics Conference, Osaka, Japan, 19–22 June 2001.
The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness —3.5 nm) NbN 1.5 p.m wide and 0.2 pm long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.