Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Annual Meeting Optical Society of America

Infrared spectral hole burning of defects in elemental semiconductors

S. P. Love, K. Muro, Robert E. Peale, Albert J. Sievers

Published Jan 1, 1987• 0 citations
Publisher

Abstract

In the first experimental search for persistent spectral hole burning in an elemental semiconductor, we examined a variety of electronic defects in Si and in a Si:Ge alloy. No persistent spectral changes have been observed for Be-Li, Se0, or thermal donors in Si; however, spectral holes which persist for ~5 ms have been produced in the 1s-2p absorption lines of a sulfur-hydrogen complex in Si. The addition of 0.7% Ge to the Si host ensures that an inhomogeneously broadened system is being studied. Measurements combining a CO2 laser pump with a Fourier transform spectrometer probe reveal that the hole burning is due to migration of electrons from the S-H centers to shallow traps. The large observed hole width (4.6 cm−1) is attributed to spectral diffusion by resonant excitation transfer. The hole burning behavior of the 2p± line is temperature independent below 30 K, whereas the hole burning of the 2p0 line exhibits strong temperature dependence, suggesting that the ionization of the laser-excited centers in the 2p± hole burning process occurs via energy transfer between neighboring excited centers rather than by thermal ionization.

DOI
10.1364/oam.1987.tul6

Related papers

Infrared spectral hole burning of sulfur-hydrogen deep donors in a Si: Ge crystal

S. P. Love, K. Muro, Robert E. Peale +2 more

Spectral holes which persist for \ensuremath{\sim}5 msec have been produced in the spectrum of a sulfur-hydrogen complex in a Si-0.1 at.% Ge alloy crystal maintained at 1.7 K. Measurements which combine an infrared laser pump with a Fourier-transform spectrometer probe show that the hole burning is due to migration of electrons from the S-H centers to shallow traps. The large observed hole width (4.6 ${\mathrm{cm}}^{\ensuremath{-}1}$) is attributed to spectral diffusion by resonant excitation transfer. The lack of temperature dependence of the hole burning of the $2{p}_{\ifmmode\pm\else\textpm\fi{}}$ line below 30 K suggests that excitation transfer is also responsible for the ionization of laser-excited centers in the hole-burning process.

Physical review. B, Condensed matter•Aug 15, 1987•9 citations

Persistent spectral hole-burning in electronic tranisitions of different types of lattice defects

T. Attenberger, Ilmo Sildos, Glynn D. Jones +2 more

With a ring dye laser persistent spectral hole-burning was measured by fluorescence excitation spectroscopy in the zero-phonon lines of the 2llg ↔ 2llu transition in KI:S2 − and of the 3H4 → 3P0 transition of a defect center with three D− ions in SrF2:Pr3+:D−and also in the zero-phonon line at 462.5 nm of a color center in neutron-irradiated and annealed α-Al2O3. In all three lines holes with a width in the order of 1 GHz could be obtained at 1.5 K with single frequency laser. With broad-band laser in KI:S2 − and SrF2:Pr3+:D− spectral redistribution within the full range of inhomogeneous broadening could be observed which are explained by a photophysical model based on barrier crossing in asymmetric double-well-potentials. In the case of sapphire a photobleaching process is dominant which is effective also for nonselective excitation, and the holes are thermoresistant up to 300 K.

Radiation effects and defects in solids•Nov 1, 1991•4 citations

Off-resonant spectral hole burning in CaS:Eu by time-varying Coulomb fields

S. A. Basun, Madis Raukas, Uwe Happek +5 more

Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of ${\mathrm{Eu}}^{2+}$ in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable ${4f}^{6}5d$ excited state to the conduction band followed by electron transport to ${\mathrm{Eu}}^{3+}$ centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ($\ensuremath{\approx}5$ and $\ensuremath{\approx}100\mathrm{GHz}$) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the ${\mathrm{Eu}}^{2+}$ absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.

Physical review. B, Condensed matter•Nov 15, 1997•21 citations

Persistent hole burning of the nitrogen vacancy center and the 2.16 eV center of chemical-vapor deposited diamond

Yoshihiro Yokota, Jing Sheng, Toshimichi Ito +4 more

The persistent spectral hole burning effect has been observed for the nitrogen vacancy (NV) center and the 2.16 eV center in chemical-vapor deposited (CVD) diamond. This sideband is the first observation of spectral hole burning in CVD diamond. Holes are burned in the inhomogeneously broadened zero-phonon lines of both the centers by dye lasers. The holes were observed by photoluminescence excitation spectroscopy, with monitoring of the phonon-sideband emission, at temperatures up to 130 K for the NV center and up to 100 K for the 2.16 eV center.

Applied Physics Letters•Nov 2, 1992•9 citations

Observation of persistent spectral hole–burning in semiconductor nanocrystals

Yasuaki Masumoto, Lev Zimin, Kazuhiko Naoe

So far, persistent spectral hole-burning (PSHB) phenomenon has been observed in a number of materials. They are molecules in glasses, crystals and polymers, color centers in alkali halide crystals, and rare earth and transition metal ions in glasses and crystals. They are molecular or ionic guests embedded in glass, crystal or polymer hosts. Basic requirements for the PSHB are summarized as follows: (1) The optical absorption of guests embedded in hosts must be broadened inhomogeneously. (2) There must exist more than one ground state configurations of the total system consisting of guests and hosts. (3) The relaxation among the ground states must be slower than the decay rate of any excited state. In fact, this set of requirements is satisfied in many kinds of molecular or ionic guests in hosts, such as glasses, crystals and polymers, at low temperatures. We can naturally understand that guests consisting of small number of atoms are greatly influenced by the surrounding hosts and that the energy levels of the guests are inhomogeneously broadened.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1994•0 citations

Persistent Spectral-Hole-Burning in Semiconductor Quantum Dots and its Application to Spectroscopy

Yasuaki Masumoto

Persistent spectral-hole-burning (PSHB) phenomena have been observed in many kinds of semiconductor quantum dots (QDs). Luminescence hole burning and charged excitons have been observed in CuCl QDs in NaCl crystals. The observed PSHB phenomena are explained by the ionization of QDs. The energy of photoionized QDs is changed from the original energy and their new energies depend on the spatial arrangement of trapped carriers. Quantum confinement of carriers and the resulting strong Coulomb interaction between confined carriers and trapped carriers cause the energy change. PSHB has been widely applied to site-selective spectroscopy of QDs. Size-dependent excited exciton quantum states in CuCl quantum cubes, size-dependent excited electron-hole quantum states in CdTe QDs and renormalization of longitudinal optical phonons confined in CuCl QDs have been revealed by studying sideband holes. This also allowed the measurement of accumulated photon echo, which clarified the very sharp homogeneous spectral linewidth of QDs under weak excitation conditions.

Japanese Journal of Applied Physics•Jan 1, 1999•4 citations
In the first experimental search for persistent spectral hole burning in an elemental semiconductor, we examined a variety of electronic defects in Si and in a Si:Ge alloy. No persistent spectral changes have been observed for Be-Li, Se0, or thermal donors in Si; however, spectral holes which persist for ~5 ms have been produced in the 1s-2p absorption lines of a sulfur-hydrogen complex in Si. The addition of 0.7% Ge to the Si host ensures that an inhomogeneously broadened system is being studied. Measurements combining a CO2 laser pump with a Fourier transform spectrometer probe reveal that the hole burning is due to migration of electrons from the S-H centers to shallow traps. The large observed hole width (4.6 cm−1) is attributed to spectral diffusion by resonant excitation transfer. The hole burning behavior of the 2p± line is temperature independent below 30 K, whereas the hole burning of the 2p0 line exhibits strong temperature dependence, suggesting that the ionization of the laser-excited centers in the 2p± hole burning process occurs via energy transfer between neighboring excited centers rather than by thermal ionization.
Spectral holes which persist for \ensuremath{\sim}5 msec have been produced in the spectrum of a sulfur-hydrogen complex in a Si-0.1 at.% Ge alloy crystal maintained at 1.7 K. Measurements which combine an infrared laser pump with a Fourier-transform spectrometer probe show that the hole burning is due to migration of electrons from the S-H centers to shallow traps. The large observed hole width (4.6 ${\mathrm{cm}}^{\ensuremath{-}1}$) is attributed to spectral diffusion by resonant excitation transfer. The lack of temperature dependence of the hole burning of the $2{p}_{\ifmmode\pm\else\textpm\fi{}}$ line below 30 K suggests that excitation transfer is also responsible for the ionization of laser-excited centers in the hole-burning process.
With a ring dye laser persistent spectral hole-burning was measured by fluorescence excitation spectroscopy in the zero-phonon lines of the 2llg ↔ 2llu transition in KI:S2 − and of the 3H4 → 3P0 transition of a defect center with three D− ions in SrF2:Pr3+:D−and also in the zero-phonon line at 462.5 nm of a color center in neutron-irradiated and annealed α-Al2O3. In all three lines holes with a width in the order of 1 GHz could be obtained at 1.5 K with single frequency laser. With broad-band laser in KI:S2 − and SrF2:Pr3+:D− spectral redistribution within the full range of inhomogeneous broadening could be observed which are explained by a photophysical model based on barrier crossing in asymmetric double-well-potentials. In the case of sapphire a photobleaching process is dominant which is effective also for nonselective excitation, and the holes are thermoresistant up to 300 K.
Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of Eu2+{\mathrm{Eu}}^{2+}Eu2+ in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable 4f65d{4f}^{6}5d4f65d excited state to the conduction band followed by electron transport to Eu3+{\mathrm{Eu}}^{3+}Eu3+ centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ($\ensuremath{\approx}5$ and $\ensuremath{\approx}100\mathrm{GHz}$) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the Eu2+{\mathrm{Eu}}^{2+}Eu2+ absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.
The persistent spectral hole burning effect has been observed for the nitrogen vacancy (NV) center and the 2.16 eV center in chemical-vapor deposited (CVD) diamond. This sideband is the first observation of spectral hole burning in CVD diamond. Holes are burned in the inhomogeneously broadened zero-phonon lines of both the centers by dye lasers. The holes were observed by photoluminescence excitation spectroscopy, with monitoring of the phonon-sideband emission, at temperatures up to 130 K for the NV center and up to 100 K for the 2.16 eV center.
So far, persistent spectral hole-burning (PSHB) phenomenon has been observed in a number of materials. They are molecules in glasses, crystals and polymers, color centers in alkali halide crystals, and rare earth and transition metal ions in glasses and crystals. They are molecular or ionic guests embedded in glass, crystal or polymer hosts. Basic requirements for the PSHB are summarized as follows: (1) The optical absorption of guests embedded in hosts must be broadened inhomogeneously. (2) There must exist more than one ground state configurations of the total system consisting of guests and hosts. (3) The relaxation among the ground states must be slower than the decay rate of any excited state. In fact, this set of requirements is satisfied in many kinds of molecular or ionic guests in hosts, such as glasses, crystals and polymers, at low temperatures. We can naturally understand that guests consisting of small number of atoms are greatly influenced by the surrounding hosts and that the energy levels of the guests are inhomogeneously broadened.
Persistent spectral-hole-burning (PSHB) phenomena have been observed in many kinds of semiconductor quantum dots (QDs). Luminescence hole burning and charged excitons have been observed in CuCl QDs in NaCl crystals. The observed PSHB phenomena are explained by the ionization of QDs. The energy of photoionized QDs is changed from the original energy and their new energies depend on the spatial arrangement of trapped carriers. Quantum confinement of carriers and the resulting strong Coulomb interaction between confined carriers and trapped carriers cause the energy change. PSHB has been widely applied to site-selective spectroscopy of QDs. Size-dependent excited exciton quantum states in CuCl quantum cubes, size-dependent excited electron-hole quantum states in CdTe QDs and renormalization of longitudinal optical phonons confined in CuCl QDs have been revealed by studying sideband holes. This also allowed the measurement of accumulated photon echo, which clarified the very sharp homogeneous spectral linewidth of QDs under weak excitation conditions.