Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Optics and Spectroscopy

Effect of tunnel interference of oppositely directed waves in planar layers with anomalous dispersion

В. В. Ефимов, Dmitrii I. Sementsov

Published Aug 1, 1997• 0 citations
OpenAlex

Related papers

Interference and dispersion effects on tunneling time

J. C. Martinez, E. Polatdemir, Muhammad Taufik

The European Physical Journal D•Aug 17, 2006•5 citations

Anomalous enhancement of quasiparticle current near a potential barrier in a Bose-Einstein condensate

Shunji Tsuchiya, Yoji Ohashi

We investigate tunneling properties of Bogoliubov phonons in a Bose-Einstein condensate. We find the anomalous enhancement of the quasiparticle current ${J}_{\mathrm{q}}$ carried by Bogoliubov phonons near a potential barrier, due to the supply of the excess current from the condensate. This effect leads to the increase of quasiparticle transmission probability in the low energy region found by Kovrizhin et al. We also show that the quasiparticle current twists the phase of the condensate wave function across the barrier, leading to a finite Josephson supercurrent ${J}_{\mathrm{s}}$ through the barrier. This induced supercurrent flows in the opposite direction to the quasiparticle current so as to cancel out the enhancement of ${J}_{\mathrm{q}}$ and conserve the total current $J={J}_{\mathrm{q}}+{J}_{\mathrm{s}}$.

arXiv:0802.0728•Physical Review A•Jul 22, 2008•17 citations

Nonlinear Faraday rotation in electromagnetically induced transparency medium of semiconductor three quantum dots

Chen Qiu-Cheng

In the past few years, many interesting optical phenomena, such as electromagnetically induced transparency, coherent optical control of a biexciton, slow light and optical solitons, have been investigated in single quantum dot (QD). However, in an actual semiconductor device there exist many quantum dots (QDs). Recently, QD molecule, which is comprised of double semiconductor QDs coupled by tunneling coupling, has been proposed. In this new semiconductor structure, many complex but interesting phenomena have been discovered. In fact, three QD molecules may also be composed of three QDs, which can be coupled by interdot tunneling coupling. For the three semiconductor QDs molecules, the influence of the interdot tunneling coupling strength must be considered. So, in this paper, with considering that a weak, -linear-polarized probe field can form left- and right-polarized components under the control of the parallel magnetic field, and when they are combined with the tunneling coupling among the QDs, an electromagnetically induced transparency medium of a five-level M configuration semiconductor three QDs is proposed. Subsequently, the nonlinear Faraday rotation in the semiconductor three QDs is analytically studied. For the linear case, the linear dispersion relation is driven by a method of multiple scales. Then, by studying the linear optical properties, it is found that the system exhibits a single tunneling induced transparency window due to the quantum destructive interference effect driven by the interdot tunneling coupling under appropriate conditions, and the width of the tunneling induced transparency window can be effectively controlled by the strength of the interdot tunneling coupling. Meanwhile, the switch regulatory effect, which changes from the anomalous dispersion regime to the normal dispersion regime, is likely to be achieved by changing the strength of the interdot tunneling coupling. For the nonlinear case, two coupled nonlinear Schrdinger equations, which govern the evolutions of left- and right-polarized components of the weak, -linear-polarized probe field under the applied longitudinal magnetic field, are derived. By studying the nonlinear properties, it is shown that a large nonlinear Faraday rotation angle can be obtained due to the quantum interference effect which is induced by the interdot tunneling coupling with a very low absorption of the weak, -linear-polarized probe field. In addition, it is also found that the nonlinear Faraday rotation direction is opposite to line Faraday rotation for the same magnetic field. What is more, the nonlinear Faraday rotation angle grows bigger than the linear Faraday rotation. These results mean that the Faraday rotation of the three semiconductor QDs with the electromagnetically induced transparency can be more effectively controlled by the nonlinear effect.

Acta Physica Sinica•Jan 1, 2016•1 citation

EFFECTS OF DISSIPATIVE TUNNELING: THEORY AND COMPARISON WITH AN EXPERIMENT

P. V. Krevchik, Кревчик Владимир Дмитриевич, Михаил Борисович Семенов

Известия высших учебных заведений. Поволжский регион. Физико-математические науки•Jan 1, 2016•0 citations

Domain walls in the quantum transverse Ising model

Malte Henkel, A. Brooks Harris, Marek Cieplak

We discuss several problems concerning domain walls in the spin-S Ising model at zero temeprature in a magnetic field, H/(2S), applied in the x direction. Some results are also given for the planar (y-z) model in a transverse field. We treat the quantum problem in one dimension by perturbation theory at small H and numerically over a large range of H. We obtain the spin-density profile by fixing the spins at opposite ends of the chain to have opposite signs of ${\mathit{S}}_{\mathit{z}}$. One dimensional is special in that there the quantum width of the wall is proportional to the size L of the system. We also study the quantitative features of the ``particle'' band which extends up to energies of order H above the ground state. Except for the planar limit, this particle band is well separated from excitations having energy J/S involving creation of more walls. At large S this particle band develops energy gaps and the lowest subband has tunnel splittings of order H${2}^{1\mathrm{\ensuremath{-}}2\mathit{S}}$. This scale of of energy gives rise to anomalous scaling with respect to (a) finite size, (b) temperature, or (c) random potentials. The intrinsic width of the domain wall and the pinning energy are also defined and calculated in certain limiting cases. The general conclusion is that quantum effects prevent the wall from being sharp and in higher dimension would prevent sudden excursions in the configuration of the wall.

arXiv:cond-mat/9502087•Physical review. B, Condensed matter•Aug 1, 1995•7 citations

Tunnelling and Reflection of Matter-waves by a Repulsive Barrier

Jason Nguyen, Paul Dyke, Alina Blinova +2 more

Bulletin of the American Physical Society•Jun 6, 2014•0 citations
We investigate tunneling properties of Bogoliubov phonons in a Bose-Einstein condensate. We find the anomalous enhancement of the quasiparticle current Jq{J}_{\mathrm{q}}Jq​ carried by Bogoliubov phonons near a potential barrier, due to the supply of the excess current from the condensate. This effect leads to the increase of quasiparticle transmission probability in the low energy region found by Kovrizhin et al. We also show that the quasiparticle current twists the phase of the condensate wave function across the barrier, leading to a finite Josephson supercurrent Js{J}_{\mathrm{s}}Js​ through the barrier. This induced supercurrent flows in the opposite direction to the quasiparticle current so as to cancel out the enhancement of Jq{J}_{\mathrm{q}}Jq​ and conserve the total current J=Jq+JsJ={J}_{\mathrm{q}}+{J}_{\mathrm{s}}J=Jq​+Js​.
In the past few years, many interesting optical phenomena, such as electromagnetically induced transparency, coherent optical control of a biexciton, slow light and optical solitons, have been investigated in single quantum dot (QD). However, in an actual semiconductor device there exist many quantum dots (QDs). Recently, QD molecule, which is comprised of double semiconductor QDs coupled by tunneling coupling, has been proposed. In this new semiconductor structure, many complex but interesting phenomena have been discovered. In fact, three QD molecules may also be composed of three QDs, which can be coupled by interdot tunneling coupling. For the three semiconductor QDs molecules, the influence of the interdot tunneling coupling strength must be considered. So, in this paper, with considering that a weak, -linear-polarized probe field can form left- and right-polarized components under the control of the parallel magnetic field, and when they are combined with the tunneling coupling among the QDs, an electromagnetically induced transparency medium of a five-level M configuration semiconductor three QDs is proposed. Subsequently, the nonlinear Faraday rotation in the semiconductor three QDs is analytically studied. For the linear case, the linear dispersion relation is driven by a method of multiple scales. Then, by studying the linear optical properties, it is found that the system exhibits a single tunneling induced transparency window due to the quantum destructive interference effect driven by the interdot tunneling coupling under appropriate conditions, and the width of the tunneling induced transparency window can be effectively controlled by the strength of the interdot tunneling coupling. Meanwhile, the switch regulatory effect, which changes from the anomalous dispersion regime to the normal dispersion regime, is likely to be achieved by changing the strength of the interdot tunneling coupling. For the nonlinear case, two coupled nonlinear Schrdinger equations, which govern the evolutions of left- and right-polarized components of the weak, -linear-polarized probe field under the applied longitudinal magnetic field, are derived. By studying the nonlinear properties, it is shown that a large nonlinear Faraday rotation angle can be obtained due to the quantum interference effect which is induced by the interdot tunneling coupling with a very low absorption of the weak, -linear-polarized probe field. In addition, it is also found that the nonlinear Faraday rotation direction is opposite to line Faraday rotation for the same magnetic field. What is more, the nonlinear Faraday rotation angle grows bigger than the linear Faraday rotation. These results mean that the Faraday rotation of the three semiconductor QDs with the electromagnetically induced transparency can be more effectively controlled by the nonlinear effect.
We discuss several problems concerning domain walls in the spin-S Ising model at zero temeprature in a magnetic field, H/(2S), applied in the x direction. Some results are also given for the planar (y-z) model in a transverse field. We treat the quantum problem in one dimension by perturbation theory at small H and numerically over a large range of H. We obtain the spin-density profile by fixing the spins at opposite ends of the chain to have opposite signs of Sz{\mathit{S}}_{\mathit{z}}Sz​. One dimensional is special in that there the quantum width of the wall is proportional to the size L of the system. We also study the quantitative features of the ``particle'' band which extends up to energies of order H above the ground state. Except for the planar limit, this particle band is well separated from excitations having energy J/S involving creation of more walls. At large S this particle band develops energy gaps and the lowest subband has tunnel splittings of order H${2}^{1\mathrm{\ensuremath{-}}2\mathit{S}}$. This scale of of energy gives rise to anomalous scaling with respect to (a) finite size, (b) temperature, or (c) random potentials. The intrinsic width of the domain wall and the pinning energy are also defined and calculated in certain limiting cases. The general conclusion is that quantum effects prevent the wall from being sharp and in higher dimension would prevent sudden excursions in the configuration of the wall.