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Superconducting Nanowire Single-Photon Detectors for Quantum Photonic Integrated Circuits on GaAs

Wolfgang-Gustav Ekkehart Schmidt

Published Jan 1, 2019• 0 citations
Publisher

Abstract

Superconducting nanowire single-photon detectors (SNSPDs) are very promising as integrated detectors for future quantum photonic integrated circuits. In this work, main technological challenges for the integration of NbN based SNSPDs onto GaAs based phonic circuits are addressed. A new approach to improve the performance of meander style SNSPDs based on a variable thickness is introduced and the first full integration of a quantum photonic chip on a scalable monolithic platform is demonstrated.

DOI
10.5445/ir/1000097208

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Superconducting nanowire single-photon detectors (SNSPDs) are very promising as integrated detectors for future quantum photonic integrated circuits. In this work, main technological challenges for the integration of NbN based SNSPDs onto GaAs based phonic circuits are addressed. A new approach to improve the performance of meander style SNSPDs based on a variable thickness is introduced and the first full integration of a quantum photonic chip on a scalable monolithic platform is demonstrated.
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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ=1300 nm and T=4.2 K.
Single-photon detection possibility is a fundamental requirement for quantum technologies, including communication, computing and sensing. To achieve scalability and practical deployment, increasing attention is being directed toward integration of detectors with photonic integrated circuits, which offer compactness and compatibility with mass production. Superconducting nanowire single-photon detectors have emerged as the leading solution, combining near-unity efficiency, high temporal performance and the ability to be embedded across a wide range of photonic material platforms. In this review we trace the development of integrated superconducting nanowire single-photon detectors from early demonstrations to recent advances, outlining the progress in device architectures, material engineering and integration strategies. We also discuss performance benchmarks, emerging alternative designs, the future opportunities and challenges for this rapidly evolving field.
We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.
Quantum information processing brings new protocols to the field of communications, by ensuring absolute security of information transfer thanks to the laws of quantum physics. Furthermore, in the field of computing, quantum processing offers the perspective of performing massively parallel calculations, orders of magnitude faster than with a classical computer. For these two applications, excellent detectors are required with ultimate performances. Superconducting nanowire single photon detectors (SNSPDs) are the best candidate, as they can reach near-unity detection efficiency. We are developing on-chip waveguide integrated SNSPDs on 200 mm SOI wafers, addressing both the material, architecture design and fabrication process challenges.