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Nature Communications

Quantum nanophotonics with group IV defects in diamond

Carlo Bradac, Weibo Gao, J. Forneris, Matthew E. Trusheim, Igor Aharonovich

Published Dec 9, 2019• 503 citations
Publisher

Abstract

Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

DOI
10.1038/s41467-019-13332-w

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Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.
A huge variety of optical colour centres can be found in diamond, emitting in its whole wide transparency range. Although several of these centres have been demonstrated as single-photon emitters, none of them meets all of the requirements of an ideal single-photon source. In this view, we discuss the properties of prominent optical centres, such as the nitrogen vacancy, the silicon vacancy or the so-called NE8 centre, as well as recently found centres ascribed to defects containing Ni, Si, Cr and Xe. Besides suitable intrinsic properties, it is necessary for practical applications that optical centres can be created artificially on demand. Of all known methods, only ion implantation allows for the most controlled creation of such defect centres. In this paper, we discuss how nanoscalability, that is, the nanometre placement and the deterministic creation of optical centres, can, could or cannot be achieved by the available ion implantation techniques. A fine analysis of individual optical centres is now possible, thanks to the recently developed subdiffraction optical microscopy methods.
Point defects in diamond, particularly nitrogen-vacancy (NV) centers, have emerged as powerful tools for a broad range of quantum technologies. These defects are promising candidates for quantum information science, serving as deterministic single-photon sources and solid-state quantum memories. They have also been employed as nanoscale quantum sensors to detect various physical quantities, including magnetic fields, electric fields, and temperature, owing to their long spin coherence time at room temperature. Development of these diamond-based quantum technologies has been rapidly boosted by a recent quantum leap in nanofabrication technologies for high-quality single-crystal diamond. Incorporating these color centers into diamond nanostructures with mature integrated photonics provides a promising route to build scalable and practical systems for quantum applications. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms. Nitrogen-vacancy centers in diamond have emerged as powerful tools for a broad range of quantum technologies. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms.
Defect centers in diamond are regarded as a promising candidate for future solid state quantum technology. In particular the nitrogen vacancy (NV) center attracts researchers attention, as it promises to emit indistinguishable single photons and provides a triplet ground state with ultra long spin coherence times. In particular NV centers in nano diamonds are attractive, since they can be integrated into quantum photonic hybrid devices with nano manipulation techniques. We report on first demonstrations of the integration of NV-centers into photonic hybrid devices, and point out future applications. Beside the striking demonstrations of the integrability, nanodiamonds have several drawbacks. In particular the spectral diffusion of the zero-phonon line is addressed.
Abstract Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most investigated owing to its superior characteristics, which promise the development of highly sophisticated quantum devices, in particular for sensing applications. Nevertheless, harnessing the potential of these centres mainly relies on the availability of high quality and purity diamond single crystals that need to be specially designed and engineered for this purpose. Plasma assisted chemical vapour deposition (CVD) has become a key enabling technology in this field of research. Nitrogen can indeed be directly doped in situ into a high crystalline quality diamond matrix in a controlled way, allowing the production of single isolated centres or ensembles that can potentially be integrated into a device. In this paper we will provide an overview of the requirements for synthesizing ‘quantum-grade’ diamond films using CVD. These include the reduction of impurities and surrounding spins that limit coherence times, the control of NV density in a wide range of concentrations as well as their spatial localization within the diamond. Enhancing the charge state and preferential orientation of the colour centres is also discussed. These improvements in material fabrication have contributed to positioning diamond as one of the most promising solid-state quantum systems and the first industrial applications in sensing are just starting to emerge.
Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.
In recent years there has been substantial progress in solid-state quantum information demonstrations based on diamond. This ranges from room-temperature multi-qubit quantum registers to spin-photon entanglement to loophole-free Bell tests. Most of these demonstrations are done with the nitrogen-vacancy (NV) center. Recently however the silicon-vacancy (SiV) center has shown a much better coupling to photons, owing to the suppression of spectral diffusion. Still more recently the germanium-vacancy (GeV) has shown much higher quantum efficiency the SiV. However there are tradeoffs. In this talk I will review the various options for quantum information devices in diamond. I will also discuss new options for the future, including designer color centers made possible by novel diamond growth techniques.