© 2026 Aqora Quantum S.A.S.

Terms Privacy Legal Notice

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Generating Maximal Entanglement between Spectrally Distinct Solid-State Emitters

Kristoffer B. Joanesarson, David L. Hurst, Jake Iles-Smith, Jesper Mørk, Pieter Kok

Published Jun 1, 2019• 0 citations

Abstract

Quantum entanglement is an important and often necessary resource for quantum information processing e.g. the measurement-based quantum computer [1]. Current protocols for generating entanglement between emitters assume near identical spectral properties [2-3], which is a major obstacle for using integrated solid-state emitters in photonic structures as a scalable platform. The solid-state emitters can vary significantly from one another in terms of both lifetimes and central energies due to imperfections during fabrication and therefore need to be tuned into resonance e.g. electrically [4]. The requirement for local tuning of emitters provides a barrier to scalability.

DOI: 10.1109/cleoe-eqec.2019.8871475

Related papers

High-fidelity entanglement of two spectrally-distinct solid state emitters

Daniel R. E. Hodgson, Pieter Kok

Solid state quantum emitters with electronic spin properties can be entangled using optical interferometric which-path erasure techniques that rely on identical frequencies and linewidths of the emitters. This promises a powerful, fast and scalable platform for quantum technologies. Using current protocols, a pair of emitters embedded in a waveguide interferometer can be deterministically prepared in a maximally entangled state. However, the amount of entanglement diminishes rapidly with increasing separation of the emission lines and variations in the linewidths of the emitters. Solid state emitters such as quantum dots are subject to intrinsic variations in the fabrication process. Therefore, manufacturing the required number of identical emitters on a chip is not scalable. In this Letter, we present a method that uses readily available pairs of entangled photons to entangle solid state emitters with large transition frequency separations and linewidth variations, circumventing the need to fabricate optically identical emitters. We demonstrate a concurrence of C = 0.95 for typical quantum dots using narrowband photon inputs.

quant-pharXiv:2610.31283•Oct 23, 2026•0 citations

Engineering Novel Quantum Emitter Materials for High-Fidelity Entanglement Generation in Noisy Networks Authors

Abiodun Okunola, HAbibat Sule, Kivat Brown

•Jan 1, 2025•0 citations

Entanglement generation between two solid-state qubits mediated by microwave photons

Marlon S. Domínguez, Herbert Vinck-Posada, Edgar A. Gómez

Physics Letters A•Nov 23, 2020•3 citations

Multiple intrinsically identical single-photon emitters in the solid state

Lachlan J. Rogers, Kay D. Jahnke, Tokuyuki Teraji +8 more

Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single-photon emitters are required. However, typical solid-state single-photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here we demonstrate bright silicon vacancy (SiV−) centres in low-strain bulk diamond, which show spectral overlap of up to 91% and nearly transform-limited excitation linewidths. This is the first time that distinct single-photon emitters in the solid state have shown intrinsically identical spectral properties. Our results have impact on the application of single-photon sources for quantum optics and cryptography. In quantum optical technologies, identical emitters of indistinguishable single photons are difficult to realize due to the inherent dissimilarity of each emitting device. Here, Rogers et al.demonstrate a solid-state uniform single-photon source, which does not require external tuning of optical properties.

arXiv:1310.3804•Nature Communications•Aug 27, 2014•300 citations

Spectral tuning of single T centres by the Stark effect

Michael Dobinson, Felix Hufnagel, Simon A. Meynell +8 more

Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies.

quant-pharXiv:2604.25170•Apr 29, 2026

High-performance Photonic Entanglement Generation

Xiongfeng Ma

•Oct 31, 2022•0 citations

Quantum entanglement is an important and often necessary resource for quantum information processing e.g. the measurement-based quantum computer [1]. Current protocols for generating entanglement between emitters assume near identical spectral properties [2-3], which is a major obstacle for using integrated solid-state emitters in photonic structures as a scalable platform. The solid-state emitters can vary significantly from one another in terms of both lifetimes and central energies due to imperfections during fabrication and therefore need to be tuned into resonance e.g. electrically [4]. The requirement for local tuning of emitters provides a barrier to scalability.

Solid state quantum emitters with electronic spin properties can be entangled using optical interferometric which-path erasure techniques that rely on identical frequencies and linewidths of the emitters. This promises a powerful, fast and scalable platform for quantum technologies. Using current protocols, a pair of emitters embedded in a waveguide interferometer can be deterministically prepared in a maximally entangled state. However, the amount of entanglement diminishes rapidly with increasing separation of the emission lines and variations in the linewidths of the emitters. Solid state emitters such as quantum dots are subject to intrinsic variations in the fabrication process. Therefore, manufacturing the required number of identical emitters on a chip is not scalable. In this Letter, we present a method that uses readily available pairs of entangled photons to entangle solid state emitters with large transition frequency separations and linewidth variations, circumventing the need to fabricate optically identical emitters. We demonstrate a concurrence of C = 0.95 for typical quantum dots using narrowband photon inputs.

Emitters of indistinguishable single photons are crucial for the growing field of quantum technologies. To realize scalability and increase the complexity of quantum optics technologies, multiple independent yet identical single-photon emitters are required. However, typical solid-state single-photon sources are inherently dissimilar, necessitating the use of electrical feedback or optical cavities to improve spectral overlap between distinct emitters. Here we demonstrate bright silicon vacancy (SiV−) centres in low-strain bulk diamond, which show spectral overlap of up to 91% and nearly transform-limited excitation linewidths. This is the first time that distinct single-photon emitters in the solid state have shown intrinsically identical spectral properties. Our results have impact on the application of single-photon sources for quantum optics and cryptography. In quantum optical technologies, identical emitters of indistinguishable single photons are difficult to realize due to the inherent dissimilarity of each emitting device. Here, Rogers et al.demonstrate a solid-state uniform single-photon source, which does not require external tuning of optical properties.

Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies.