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Optics Express

Single photon detection with superconducting nanowires on crystalline silicon carbide

F. Martini, Alessandro Gaggero, F. Mattioli, Roberto Leoni

Published Oct 1, 2019• 23 citations
Publisher

Abstract

Silicon carbide (SiC) is among the most promising optical materials for the realization of classical and quantum photonics, due to the simultaneous presence of quantum emitters and a non-centrosymmetric crystal structure. In recent years, progress have been made in the development of SiC integrated optical components making this a mature platform for the implementation of quantum experiments on chip. Toward this scope, the fabrication of a single photon detector that can be implemented on top of a photonic circuit is essential to achieve a monolithic integration of all the fundamental building blocks required for photonic quantum technologies. Here we demonstrate for the first time single photon detection with superconducting nanowires on top of a bare 3C SiC layer using a novel approach for the fiber-to-detector coupling that allows the optical characterization of multiple detectors without the use of neither cryogenic positioners nor the micromachining of the substrate.

DOI
10.1364/oe.27.029669

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Silicon carbide (SiC) is among the most promising optical materials for the realization of classical and quantum photonics, due to the simultaneous presence of quantum emitters and a non-centrosymmetric crystal structure. In recent years, progress have been made in the development of SiC integrated optical components making this a mature platform for the implementation of quantum experiments on chip. Toward this scope, the fabrication of a single photon detector that can be implemented on top of a photonic circuit is essential to achieve a monolithic integration of all the fundamental building blocks required for photonic quantum technologies. Here we demonstrate for the first time single photon detection with superconducting nanowires on top of a bare 3C SiC layer using a novel approach for the fiber-to-detector coupling that allows the optical characterization of multiple detectors without the use of neither cryogenic positioners nor the micromachining of the substrate.
On-chip single photon detection is crucial for implementing on-chip quantum communication, quantum simulation, and calculation. Superconducting nanowire single-photon detectors (SNSPDs) have become one of the essential techniques to achieve high-efficiency, on-chip, single-photon detection at scale due to their high detection efficiency, low dark count rate, and low jitter. Silicon carbide (SiC) has emerged as a promising integrated photonics platform due to its nonlinear optical processing capabilities, compatibility with CMOS technology, and outstanding quantum properties as a device for single photon sources. However, achieving high-efficiency superconducting nanowire single-photon detection on SiC substrates has yet to be demonstrated. In this study, we deposited polycrystalline NbN thin films onto 4H-SiC substrates. We also ensured that the deposited NbN thin film had a flat surface with a roughness less than 1 nm on the C-side 4H-SiC substrate through optimized chemical mechanical polishing. The NbN-SNSPD achieved a saturated quantum efficiency covering the color center emission bandwidth wavelength range (from 861 to 1550 nm) of the 4H-SiC material. These results offer a promising solution for high-efficiency single-photon detection on fully integrated quantum optical chips on 4H-SiC substrates.
Quantum photonic integration is one of the leading approaches for enabling the implementation of quantum simulation and computing at the scale of tens to hundreds of photons. Quantum photonic integrated circuits require the monolithic integration of single-photon sources and passive circuit elements, such as waveguides and couplers, with single-photon detectors. A promising approach for on-chip single-photon detection is the use of superconducting nanowires on top of semiconductor waveguides. Here, we present state-of-the-art NbN films on GaAs for the realization of waveguide superconducting single-photon detectors, suitable for integration with sources and linear optical circuits. Based on the measured optical properties, we propose a new design which allows high absorptance for short nanowires in order to increase the integration density in a quantum photonic chip. Finally, we review recent results on integrated single-photon and photon-number-resolving detectors, and integrated autocorrelators.
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We demonstrate niobium titanium nitride superconducting nanowires patterned on stoichiometric silicon nitride waveguides for detecting visible and infrared photons. The use of silicon nitride on insulator on silicon substrates allows us to simultaneously realize photonic circuits for visible and infrared light and integrate them with nanowire detectors directly on-chip. By implementing a traveling wave detector geometry in this material platform, we achieve efficient single photon detection for both wavelength regimes. Our detectors are an ideal match for integrated quantum optics as they provide crucial functionality on a wideband transparent waveguide material.
Nanophotonic integrated circuits are emerging as a promising platform for quantum photonics. A key building block are waveguide integrated detectors with superior performance. Detectors based on superconductor nanowires (SNSPDs) attached to optical waveguides have been shown to provide high efficiency and good timing performance, as well as broad bandwidth. To move towards applications in high bandwidth quantum communication and processing, ultrafast single-photon detectors with high efficiency are needed. The speed of meander type SNSPDs is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. We overcome this problem by aligning the nanowire perpendicular to the waveguide to realize devices with a length below 1 µm. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess sub-nanosecond decay (~ 120 ps) and recovery times (~ 510 ps), and thus show potential for GHz count rates at low timing jitter (~ 32 ps).