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Physical Review X

Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit

Daniel Keith, Matthew Gregory House, M. B. Donnelly, Thomas F. Watson, Bent Weber, Michelle Yvonne Simmons

Published Oct 3, 2019• 68 citations
Publisher

Abstract

New highly sensitive detectors can read the state of a single-spin qubit in microseconds with 97% accuracy, providing a realistic path toward robust error correction in silicon-based quantum computation.
DOI
10.1103/physrevx.9.041003

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Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 μμμs. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.