Quantum annealing machine based on NAND flash memory

Tetsufumi Tanamoto

For low-cost quantum computers, we theoretically propose two types of quantum annealing machines based on FinFET and floating-gate NAND flash memory.

Mark W. Johnson

Kristen L. Pudenz, Tameem Albash, Daniel A. Lidar

Tetsufumi Tanamoto, Y. Higashi, Takao Marukame +1 more

Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. Here, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. We use the same device structure as that of the commercial FG NAND flash memory except for small differences such as thinner tunneling barrier. We theoretically derive an Ising Hamiltonian from the FG system in its single-electron region. Recent high-density NAND flash memories are subject to several problems that originate from their small FG cells. In order to store information reliably, the number of electrons in each FG cell should be sufficiently large. However, the number of electrons stored in each FG cell becomes smaller and can be countable. So we utilize the countable electron region to operate single-electron effects of FG cells. Second, in the conventional NAND flash memory, the high density of FG cells induces the problem of cell-to-cell interference through their mutual capacitive couplings. This interference problem is usually solved by various methods using a software of error-correcting codes. We derive the Ising interaction from this natural capacitive coupling. Considering the size of the cell, 10 nm, the operation temperature is expected to be approximately that of a liquid nitrogen. If a commercial 64 Gbit NAND flash memory is used, ideally we expect it to be possible to construct 2 megabytes (MB) entangled qubits by using the conventional fabrication processes in the same factory as is used for manufacture of NAND flash memory. A qubit system of highest density will be obtained as a natural extension of the miniaturization of commonly used memories in this society.

Charles R. Giardina

Tetsufumi Tanamoto, Y. Higashi, Jun Deguchi

Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. In this paper, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. The purpose of using the architecture of nand flash memories is to reuse a mature technology to create large arrays of silicon qubits. Current high-density nand flash memories use sufficiently small FG cells to make the number of electrons stored in each cell small and countable. The high packing density of these cells creates mutual capacitive couplings that can be used to generate cell-to-cell interactions. We explore these characteristics to derive an Ising Hamiltonian for the FG system in the single-electron regime. Considering the size of a cell (10 nm), the ideal operation temperature of a quantum annealer based on FG cells is estimated to be approximately that of liquid nitrogen. Assuming the parameters of a commercial 64 Gbit nand, we estimate that it is possible to create 2-megabyte (MB) qubit systems solely using conventional fabrication processes. Our proposal demonstrates that a large qubit system can be obtained as a natural extension of the miniaturization of commercial-grade electronics, although more effort will likely be required to achieve high-quality qubits.