We present our study of decoherence in charge (spin) qubits due to evanescent-wave Johnson noise (EWJN) in a laterally coupled double quantum dot (single quantum dot). The high density of evanescent modes in the vicinity of metallic gates causes energy relaxation and a loss of phase coherence of electrons trapped in quantum dots. We derive expressions for the resultant energy relaxation rates of charge and spin qubits in a variety of dot geometries, and EWJN is shown to be a dominant source of decoherence for spin qubits held at low magnetic fields. Previous studies in this field approximated the charge or spin qubit as a point dipole. Ignoring the finite size of the quantum dot in this way leads to a spurious divergence in the relaxation rate as the qubit approaches the metal. Our approach goes beyond the dipole approximation and remedies this unphysical divergence by taking into account the finite size of the quantum dot. Additionally, we derive an enhancement of EWJN that occurs outside a thin metallic film, relative to the field surrounding a conducting half-space.We present our study of decoherence in charge (spin) qubits due to evanescent-wave Johnson noise (EWJN) in a laterally coupled double quantum dot (single quantum dot). The high density of evanescent modes in the vicinity of metallic gates causes energy relaxation and a loss of phase coherence of electrons trapped in quantum dots. We derive expressions for the resultant energy relaxation rates of charge and spin qubits in a variety of dot geometries, and EWJN is shown to be a dominant source of decoherence for spin qubits held at low magnetic fields. Previous studies in this field approximated the charge or spin qubit as a point dipole. Ignoring the finite size of the quantum dot in this way leads to a spurious divergence in the relaxation rate as the qubit approaches the metal. Our approach goes beyond the dipole approximation and remedies this unphysical divergence by taking into account the finite size of the quantum dot. Additionally, we derive an enhancement of EWJN that occurs outside a thin metallic film, relative to the field surrounding a conducting half-space.

arXiv:1211.3983Physical Review BJan 2, 201321 citations

Energy relaxation rate and its mesoscopic fluctuations in quantum dots

Vladyslav Kozii, Mikhail A. Skvortsov

arXiv:1603.06784Annals of PhysicsApr 13, 20165 citations

Qubit relaxation from evanescent-wave Johnson noise

Luke S. Langsjoen, Amrit Poudel, Maxim Vavilov +1 more

In many quantum computer architectures, the qubits are in close proximity to metallic device elements. Metals have a high density of photon modes, and the fields spill out of the bulk metal because of the evanescent-wave component. Thus thermal and quantum electromagnetic Johnson-type noise from metallic device elements can decohere nearby qubits. In this Rapid Communication we use quantum electrodynamics to compute the strength of this evanescent-wave Johnson noise as a function of distance $z$ from a metallic half space. Previous treatments have shown unphysical divergences at $z=0$ . We remedy this by using a proper nonlocal dielectric function. Decoherence rates of local qubits are proportional to the magnitude of electric or magnetic correlation functions evaluated at the qubit position. We present formulas for the decoherence rates. These formulas serve as an important constraint on future device architectures. Comparison with single-electron spin relaxation measurements shows that evanescent-wave Johnson noise may constitute the dominant relaxation mechanism in experiments performed at low magnetic field.In many quantum computer architectures, the qubits are in close proximity to metallic device elements. Metals have a high density of photon modes, and the fields spill out of the bulk metal because of the evanescent-wave component. Thus thermal and quantum electromagnetic Johnson-type noise from metallic device elements can decohere nearby qubits. In this Rapid Communication we use quantum electrodynamics to compute the strength of this evanescent-wave Johnson noise as a function of distance $z$ from a metallic half space. Previous treatments have shown unphysical divergences at $z=0$. We remedy this by using a proper nonlocal dielectric function. Decoherence rates of local qubits are proportional to the magnitude of electric or magnetic correlation functions evaluated at the qubit position. We present formulas for the decoherence rates. These formulas serve as an important constraint on future device architectures. Comparison with single-electron spin relaxation measurements shows that evanescent-wave Johnson noise may constitute the dominant relaxation mechanism in experiments performed at low magnetic field.

arXiv:1203.5024Physical Review AJul 5, 201242 citations

Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations

Wenbo Sun, Sathwik Bharadwaj, Li‐Ping Yang +5 more

High-fidelity quantum gate operations are essential for achieving scalable quantum circuits. In spin qubit quantum computing systems, metallic gates and antennas that are necessary for qubit operation, initialization, and readout, also cause detrimental effects by enhancing fluctuations of electromagnetic fields. Therefore, evanescent wave Johnson noise (EWJN) caused by near-field thermal and vacuum fluctuations becomes an important unmitigated noise, which induces the decoherence of spin qubits and limits the quantum gate operation fidelity. Here, we first develop a macroscopic quantum electrodynamics theory of EWJN to account for the dynamics of two spin qubits interacting with metallic circuitry. Then we propose a numerical technique based on volume integral equations to quantify EWJN strength in the vicinity of nanofabricated metallic gates with arbitrary geometry. We study the limits to two-spin-qubit gate fidelity from EWJN-induced relaxation processes in two experimentally relevant quantum computing platforms: (a) the silicon quantum dot system and (b) nitrogen-vacancy centers in diamond. Finally, we introduce a Lindbladian engineering method to optimize the control pulse sequence design and show its enhanced performance over Hamiltonian engineering in mitigating the influence of thermal and vacuum fluctuations. Our work leverages advances in computational electromagnetics, fluctuational electrodynamics, and open quantum systems to suppress the effects of near-field thermal and vacuum fluctuations and reach the limits of two-spin-qubit gate fidelity.High-fidelity quantum gate operations are essential for achieving scalable quantum circuits. In spin qubit quantum computing systems, metallic gates and antennas that are necessary for qubit operation, initialization, and readout, also cause detrimental effects by enhancing fluctuations of electromagnetic fields. Therefore, evanescent wave Johnson noise (EWJN) caused by near-field thermal and vacuum fluctuations becomes an important unmitigated noise, which induces the decoherence of spin qubits and limits the quantum gate operation fidelity. Here, we first develop a macroscopic quantum electrodynamics theory of EWJN to account for the dynamics of two spin qubits interacting with metallic circuitry. Then we propose a numerical technique based on volume integral equations to quantify EWJN strength in the vicinity of nanofabricated metallic gates with arbitrary geometry. We study the limits to two-spin-qubit gate fidelity from EWJN-induced relaxation processes in two experimentally relevant quantum computing platforms: (a) the silicon quantum dot system and (b) nitrogen-vacancy centers in diamond. Finally, we introduce a Lindbladian engineering method to optimize the control pulse sequence design and show its enhanced performance over Hamiltonian engineering in mitigating the influence of thermal and vacuum fluctuations. Our work leverages advances in computational electromagnetics, fluctuational electrodynamics, and open quantum systems to suppress the effects of near-field thermal and vacuum fluctuations and reach the limits of two-spin-qubit gate fidelity.

arXiv:2207.09441Physical Review AppliedJun 12, 202311 citations

Decoherence and Relaxation in Two-electron Si Quantum Dots

Marta Prada, Mark G. Friesen, Robert Joynt

APSMar 1, 20080 citations

z

from a metallic half space. Previous treatments have shown unphysical divergences at

z=0

. We remedy this by using a proper nonlocal dielectric function. Decoherence rates of local qubits are proportional to the magnitude of electric or magnetic correlation functions evaluated at the qubit position. We present formulas for the decoherence rates. These formulas serve as an important constraint on future device architectures. Comparison with single-electron spin relaxation measurements shows that evanescent-wave Johnson noise may constitute the dominant relaxation mechanism in experiments performed at low magnetic field.