The quasiparticle interferences (QPIs) of the featureless Mott insulators are investigated by a $T$ -matrix formalism implemented with the dynamical mean field theory ( $T$ -DMFT). In the Mott insulating state, due to the singularity at zero frequency in the real part of the electron self-energy $[\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(\ensuremath{\omega})\ensuremath{\sim}\ensuremath{\eta}/\ensuremath{\omega}]$ predicted by DMFT, where $\ensuremath{\eta}$ can be considered as the ``order parameter'' for the Mott insulating state, QPIs are completely washed out at small bias voltages. However, a further analysis shows that $\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(\ensuremath{\omega})$ serves as an energy-dependent chemical potential shift. As a result, the effective bias voltage seen by the system is $e{V}^{\ensuremath{'}}=eV\ensuremath{-}\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(eV)$, which leads to a critical bias voltage $e{V}_{c}\ensuremath{\sim}\sqrt{\ensuremath{\eta}}$ satisfying $e{V}^{\ensuremath{'}}=0$ if and only if $\ensuremath{\eta}$ is nonzero. Consequently, the same QPI patterns produced by the noninteracting Fermi surfaces appear at this critical bias voltage $e{V}_{c}$ in the Mott insulating state. We propose that this reentry of noninteracting QPI patterns at $e{V}_{c}$ could serve as an experimental signature of the Mott insulating state, and the order parameter can be experimentally measured as $\ensuremath{\eta}\ensuremath{\sim}{(e{V}_{c})}^{2}$.The quasiparticle interferences (QPIs) of the featureless Mott insulators are investigated by a $T$-matrix formalism implemented with the dynamical mean field theory ($T$-DMFT). In the Mott insulating state, due to the singularity at zero frequency in the real part of the electron self-energy $[\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(\ensuremath{\omega})\ensuremath{\sim}\ensuremath{\eta}/\ensuremath{\omega}]$ predicted by DMFT, where $\ensuremath{\eta}$ can be considered as the ``order parameter'' for the Mott insulating state, QPIs are completely washed out at small bias voltages. However, a further analysis shows that $\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(\ensuremath{\omega})$ serves as an energy-dependent chemical potential shift. As a result, the effective bias voltage seen by the system is $e{V}^{\ensuremath{'}}=eV\ensuremath{-}\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(eV)$, which leads to a critical bias voltage $e{V}_{c}\ensuremath{\sim}\sqrt{\ensuremath{\eta}}$ satisfying $e{V}^{\ensuremath{'}}=0$ if and only if $\ensuremath{\eta}$ is nonzero. Consequently, the same QPI patterns produced by the noninteracting Fermi surfaces appear at this critical bias voltage $e{V}_{c}$ in the Mott insulating state. We propose that this reentry of noninteracting QPI patterns at $e{V}_{c}$ could serve as an experimental signature of the Mott insulating state, and the order parameter can be experimentally measured as $\ensuremath{\eta}\ensuremath{\sim}{(e{V}_{c})}^{2}$.

arXiv:1504.05214Physical Review BDec 3, 20151 citation

Interference in the Mott Insulator State of Distinguishable Particles

Lin Tian, Fumitaka Fujiwara, Tim Byrnes +1 more

Bulletin of the American Physical SocietyMar 12, 20080 citations

Fractional quantum Hall effect and featureless Mott insulators

A. A. Burkov

We point out and explicitly demonstrate a close connection that exists between featureless Mott insulators and fractional quantum Hall liquids. Using magnetic Wannier states as the single-particle basis in the lowest Landau level (LLL), we demonstrate that the Hamiltonian of interacting bosons in the LLL maps onto a Hamiltonian of a featureless Mott insulator on triangular lattice, formed by the magnetic Wannier states. The Hamiltonian is remarkably simple and consists only of short-range repulsion and ring-exchange terms.We point out and explicitly demonstrate a close connection that exists between featureless Mott insulators and fractional quantum Hall liquids. Using magnetic Wannier states as the single-particle basis in the lowest Landau level (LLL), we demonstrate that the Hamiltonian of interacting bosons in the LLL maps onto a Hamiltonian of a featureless Mott insulator on triangular lattice, formed by the magnetic Wannier states. The Hamiltonian is remarkably simple and consists only of short-range repulsion and ring-exchange terms.

arXiv:0911.4094Physical Review BMar 11, 201011 citations

Emergence of Quasiparticle in Doped Mott Insulators

Yao Wang, Yu He, Krzysztof Wohlfeld +9 more

Sep 20, 20190 citations

Renewed Understanding on Doped Mott Insulators

Masatoshi Imada

Bulletin of the American Physical SocietyMar 25, 20110 citations

The quasiparticle interferences (QPIs) of the featureless Mott insulators are investigated by a

T

-matrix formalism implemented with the dynamical mean field theory (

T

-DMFT). In the Mott insulating state, due to the singularity at zero frequency in the real part of the electron self-energy $[\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(\ensuremath{\omega})\ensuremath{\sim}\ensuremath{\eta}/\ensuremath{\omega}]$ predicted by DMFT, where $\ensuremath{\eta}$ can be considered as the ``order parameter'' for the Mott insulating state, QPIs are completely washed out at small bias voltages. However, a further analysis shows that $\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(\ensuremath{\omega})$ serves as an energy-dependent chemical potential shift. As a result, the effective bias voltage seen by the system is $e{V}^{\ensuremath{'}}=eV\ensuremath{-}\mathrm{Re}\mathrm{\ensuremath{\Sigma}}(eV)$, which leads to a critical bias voltage $e{V}_{c}\ensuremath{\sim}\sqrt{\ensuremath{\eta}}$ satisfying $e{V}^{\ensuremath{'}}=0$ if and only if $\ensuremath{\eta}$ is nonzero. Consequently, the same QPI patterns produced by the noninteracting Fermi surfaces appear at this critical bias voltage

e{V}_{c}

in the Mott insulating state. We propose that this reentry of noninteracting QPI patterns at

e{V}_{c}

could serve as an experimental signature of the Mott insulating state, and the order parameter can be experimentally measured as $\ensuremath{\eta}\ensuremath{\sim}{(e{V}_{c})}^{2}$.