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Heliyon

Optical characterization of laser-driven double Morse quantum wells

Esin KASAPOĞLU, S. Şakiroğlu, H. Sarı, İ. Sökmen, C.A. Duque

Published Jul 1, 2019• 24 citations
Publisher

Abstract

In this study, the first-order linear, third-order nonlinear, and total absorption coefficients for the intersubband transition between the two lower-lying electronic levels in both symmetric and asymmetric double Morse quantum wells under the non-resonant high-frequency intense laser field are investigated. The study takes into account the effects of the structure parameters. The results show that the electronic and also accordingly optical properties of the structures which we focus on can be adjustable to obtain a convenient response to certain studies or purposes by changing the applied external field and optical intensity as well as structure parameters.

DOI
10.1016/j.heliyon.2019.e02022

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In this study, the first-order linear, third-order nonlinear, and total absorption coefficients for the intersubband transition between the two lower-lying electronic levels in both symmetric and asymmetric double Morse quantum wells under the non-resonant high-frequency intense laser field are investigated. The study takes into account the effects of the structure parameters. The results show that the electronic and also accordingly optical properties of the structures which we focus on can be adjustable to obtain a convenient response to certain studies or purposes by changing the applied external field and optical intensity as well as structure parameters.
Abstractauthoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects upon the system are treated within the framework of non-perturbative approach, modifying the confinement potential associated to the heterostructure. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The results for a typical GaAs quantum well correspond to several configurations of the structural parameter, the strengths of the intense laser radiation, and the static electric field. Numerical results reveal the striking influence of the external fields on the magnitude and resonant peak energy positions of the optical absorption coefficients and refractive index changes. Besides, the control of intersubband optical transitions by the structure parameter seems feasible.
In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
Abstract For asymmetric triple quantum wells (ATQW) the linear and nonlinear optical absorption coefficient (OAC) and the optical refractive index change (ORIC) are analyzed according to the intense laser field (ILF). The obtained results show that the ILF parameter ( ) has an important effect on the shape and height of the confined potential profile of the ATQW, and alterations in the energy levels and the dipole moment matrix elements depend on the shape of the confinement potential. For = 10 nm (according to the parameters used in this study), ATQW turns into an asymmetric wider double confinement potential. As a consequence of the energy difference between the energy states, the absorption spectrum of (1–2) and (1–3) optical transitions initially shows a redshift (up to = 6 nm and = 4 nm, respectively) and then indicates a blueshift by increasing the ILF. For the (2–3) transition, the optical absorption spectrum continuously shows a blueshift and displays an oncoming shift toward the higher energies. Thus, the linear and nonlinear OAC and ORIC may be adjusted by modifying the ILF parameter. Our results are of use in the investigation into new ways of manipulating the optoelectronic properties of triple quantum well devices. Highlights • The electronic and optical properties of ATQW vary with increasing ILF value. • The effect of ILF on the quantum well (QW) differs depending on the shape of the QW. • OAC and ORIC change with rising ILF. • The absorption spectrum shows blueshifts or redshifts depending on the ILF.
In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes of the asymmetric double-graded quantum wells (ADGQWs) under the presence of an external static electric field are studied theoretically. The nonlinear optical properties of the ADGQWs are obtained using the compact-density matrix approach and iterative method. The numerical results obtained from the present work show that the external static electric field and the structure parameters play an important role in the optical properties of ADGQWs. Depending on the asymmetric nature of the confinement potential, in an electric field of kV/cm, the overlap between electronic wave functions decreases with increasing field whereas it increases for larger field values. The tunability of intersubband transitions can be applied to optical modulators and various device applications based on the optical transitions of electrons.
In this paper, we investigate the electronic and optical properties of an electron in both symmetric and asymmetric double quantum wells that consist of a harmonic potential with an internal Gaussian barrier under a nonresonant intense laser field. The electronic structure was obtained by using the two-dimensional diagonalization method. To calculate the linear and nonlinear absorption, and refractive index coefficients, a combination of the standard density matrix formalism and the perturbation expansion method was used. The obtained results show that the electronic and thereby optical properties of the considered parabolic-Gaussian double quantum wells could be adjusted to obtain a suitable response to specific aims with parameter alterations such as well and barrier width, well depth, barrier height, and interwell coupling, in addition to the applied nonresonant intense laser field.